Study on the characteristics of atomic hydrogen cleaning carbon contamination on multilayers
Mo/Si multilayers are widely used in synchrotron radiation beam-lines and extreme ultraviolet lithography machines. With the increasing power of light source, the problem of carboncontamination on multilayers becomes more and more serious. In-situ efficient and non-damage removal of carbon contamina...
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| Published in | Vacuum Vol. 196; p. 110738 |
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| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
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01.02.2022
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| Abstract | Mo/Si multilayers are widely used in synchrotron radiation beam-lines and extreme ultraviolet lithography machines. With the increasing power of light source, the problem of carboncontamination on multilayers becomes more and more serious. In-situ efficient and non-damage removal of carbon contamination becomes very necessary. Atomic hydrogen has been proved an effective particle to cleaning carbon without damage. However, the mechanism of atomic hydrogen cleaning carbon contamination is not completely understood now and the cleaning rate is slowly. In order to realize efficient and in situ cleaning of carbon contamination by atomic hydrogen, the influence of different conditions on the process of atomic hydrogen cleaning carbon contamination was researched with experiment firstly. Then, the characteristic relationship of working distance, temperature and atomic hydrogen concentration on the cleaning rate was identified to study the mechanism. The cleaning rate could reach 0.0347 nm/min. In the end, the change of optical properties and surface roughness of multilayer after cleaning were analyzed. The result was shown that the reflectivity of the samples could be effectively recovered and the surface roughness of the samples had little change after cleaning. The workhas great significance for realizing the efficient atomic hydrogen cleaning carbon contamination in-situ.
•The influence of different conditions on the process of H0 cleaning carbon contamination was researched by experiment.•The mechanism of cleaning was analyzed by the characteristic of d, T and H0 concentration on the cleaning rate.•The methods for increasing the cleaning rate were described based on mechanism and experiment. |
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| AbstractList | Mo/Si multilayers are widely used in synchrotron radiation beam-lines and extreme ultraviolet lithography machines. With the increasing power of light source, the problem of carboncontamination on multilayers becomes more and more serious. In-situ efficient and non-damage removal of carbon contamination becomes very necessary. Atomic hydrogen has been proved an effective particle to cleaning carbon without damage. However, the mechanism of atomic hydrogen cleaning carbon contamination is not completely understood now and the cleaning rate is slowly. In order to realize efficient and in situ cleaning of carbon contamination by atomic hydrogen, the influence of different conditions on the process of atomic hydrogen cleaning carbon contamination was researched with experiment firstly. Then, the characteristic relationship of working distance, temperature and atomic hydrogen concentration on the cleaning rate was identified to study the mechanism. The cleaning rate could reach 0.0347 nm/min. In the end, the change of optical properties and surface roughness of multilayer after cleaning were analyzed. The result was shown that the reflectivity of the samples could be effectively recovered and the surface roughness of the samples had little change after cleaning. The workhas great significance for realizing the efficient atomic hydrogen cleaning carbon contamination in-situ.
•The influence of different conditions on the process of H0 cleaning carbon contamination was researched by experiment.•The mechanism of cleaning was analyzed by the characteristic of d, T and H0 concentration on the cleaning rate.•The methods for increasing the cleaning rate were described based on mechanism and experiment. |
| ArticleNumber | 110738 |
| Author | Wang, Dazhuang Song, Yuan Yao, Shun Lu, Qipeng Gong, Xuepeng Zhang, Zhen Mao, Qijun Bai, Yang Yu, Bo Ma, Tianyu |
| Author_xml | – sequence: 1 givenname: Yuan orcidid: 0000-0001-6065-2631 surname: Song fullname: Song, Yuan email: songyuan_show@126.com organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 2 givenname: Qipeng surname: Lu fullname: Lu, Qipeng email: luqipeng@126.com organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 3 givenname: Xuepeng surname: Gong fullname: Gong, Xuepeng email: gongxuepeng120@foxmail.com organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 4 givenname: Dazhuang surname: Wang fullname: Wang, Dazhuang organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 5 givenname: Zhen surname: Zhang fullname: Zhang, Zhen organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 6 givenname: Bo surname: Yu fullname: Yu, Bo organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 7 givenname: Shun surname: Yao fullname: Yao, Shun organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 8 givenname: Qijun surname: Mao fullname: Mao, Qijun organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 9 givenname: Tianyu surname: Ma fullname: Ma, Tianyu organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China – sequence: 10 givenname: Yang surname: Bai fullname: Bai, Yang organization: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China |
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| Cites_doi | 10.1116/1.1849220 10.1557/JMR.1994.1820 10.1038/s41598-018-19273-6 10.1364/AO.37.001873 10.1107/S1600577513032402 10.1016/0257-8972(93)90217-C 10.1117/12.499373 10.3390/app9142827 10.1016/j.tsf.2008.06.046 10.1364/AO.56.005824 10.1016/j.mee.2015.04.033 10.1088/0022-3727/47/6/065205 10.3103/S0027134911020111 10.1107/S1600577515015040 10.1016/j.apsusc.2011.07.121 10.2494/photopolymer.33.419 10.1016/j.tsf.2014.10.030 10.1016/j.tsf.2016.06.002 |
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| Keywords | Extreme ultraviolet lithography Carbon contamination on multilayers Cleaning mechanism Synchrotron radiation Atomic hydrogen cleaning |
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| SubjectTerms | Atomic hydrogen cleaning Carbon contamination on multilayers Cleaning mechanism Extreme ultraviolet lithography Synchrotron radiation |
| Title | Study on the characteristics of atomic hydrogen cleaning carbon contamination on multilayers |
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