Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous "2.5 D" Photonic Crystal

• Published in: Optics express Vol. 14; no. 20; pp. 9269 - 9276
• Main Authors: Ben Bakir, Badhise, Seassal, Christian, Letartre, Xavier, Regreny, Philippe, Gendry, Michel, Viktorovitch, Pierre, Zussy, Marc, Di Cioccio, Léa, Fedeli, Jean-Marc
• Format: Journal Article
• Language: English
• Published: United States 02.10.2006
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.14.009269

The authors report on the design, fabrication and operation of heterogeneous and compact "2.5 D" Photonic Crystal microlaser with a single plane of InAs quantum dots as gain medium. The high quality factor photonic structures are tailored for vertical emission. The devices consist of a top two-dimensional InP Photonic Crystal Slab, a SiO(2) bonding layer, and a bottom high index contrast Si/SiO(2) Bragg mirror deposited on a Si wafer. Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5 microm, was achieved by photopumping. A low effective threshold, on the order of 350 microW, and a spontaneous emission factor, over 0.13, could be deduced from experiments.