Carbon nitride thin films deposited by the reactive ion beam sputtering technique

• Published in: Thin solid films Vol. 281; pp. 289 - 293
• Main Authors: Kobayashi, Satoshi, Nozaki, Shinji, Morisaki, Hiroshi, Fukui, Shigeo, Masaki, Susumu
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.1996
• Subjects: Carbon; Deposition process; Nitrides; Sputtering; Nitrides; Carbon; Sputtering; Deposition process
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(96)08655-5

Carbon nitride (C 1− x N x ) thin films were deposited at room temperature on Si and Ge substrates by the reactive ion beam sputter deposition (IBSD) technique. A pure graphite target has been sputtered with a nitrogen ion beam extracted from a Kaufman-type ion source. The films were characterized by Raman spectroscopy, IR absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). There was no clear indication of the presence of C-N single bonds in the films. Raman and 1R absorption spectre show two characteristic bands; a broad band composed of graphite G-band and disordered D-band of carbon, and the other associated with C≡N triple bonds. The D-band suggests the presence of an amorphous carbon network. The XPS spectra show the presence of C≡N triple and C≡N conjugated double bonds. As a reliable structural model of the C 1− x N x films, an amorphous network with C≡N triple bond terminations, as well as substitutions of nitrogen into the network, have been proposed. Reactive IBSD with high acceleration energy and/or the irradiation of the primary ions onto the substrate have been found to be important to form a sp 3-rich amorphous C-N network.