RS-Enhanced TCM for Multilevel Flash Memories

• Published in: IEEE transactions on communications Vol. 61; no. 5; pp. 1674 - 1683
• Main Authors: Jieun Oh, Jeongseok Ha, Jaekyun Moon, Ungerboeck, G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2013; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Ash; Coding, codes; Convolution; Convolutional codes; Decoders; Decoding; Encoding; Error correction; Errors; Exact sciences and technology; flash memory; Flash memory (computers); Information, signal and communications theory; Maximum likelihood decoding; Modulation; multi-level coded-modulation; Multilevel; Permissible error; Probability density function; Reed-Solomon codes; Signal and communications theory; Studies; Systems, networks and services of telecommunications; Telecommunications; Telecommunications and information theory; Teletraffic; Transmission and modulation (techniques and equipments); Trellis-coded modulation; Reed Solomon code; Performance evaluation; Multistage method; Error estimation; Trellis-coded modulation; multi-level coded-modulation; Flow rate regulation; Control system; Error rate; Teletraffic; flash memory; Decoding; Mixed method; Reed-Solomon codes; Concatenation; Simulation; Traffic management; Trellis coded modulation; Analytical method; Traffic control; Multilevel system; Signal to noise ratio

Multilevel flash memories store more than one bit per storage cell and are further characterized by large word (page) sizes and very low target error rates. In this paper, a high-rate error control scheme is presented that uses inner trellis-coded modulation (TCM) for storing two bits per cell with...