Computational modeling of nanostructured porous silicon
The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a nearly constant density away from the interface regions. The variation of number of particles with distance is li...
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Published in | Nanostructured materials Vol. 5; no. 1; pp. 87 - 94 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Science
1995
Elsevier |
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Abstract | The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a nearly constant density away from the interface regions. The variation of number of particles with distance is linear on a double log plot, in the regions away from interfaces. We report that the estimation of the width of the active region between the porous and the bulk lattice can be made by observing the transition from a region of constant slope to a region of zero slope on the log-log plot of number of aggregating particles versus distance. |
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AbstractList | The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a nearly constant density away from the interface regions. The variation of number of particles with distance is linear on a double log plot, in the regions away from interfaces. We report that the estimation of the width of the active region between the porous and the bulk lattice can be made by observing the transition from a region of constant slope to a region of zero slope on the log-log plot of number of aggregating particles versus distance. |
Author | Sharma, D. Venkatachalam, S. Chandorkar, A.N. Vadjikar, R.M. |
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Cites_doi | 10.1063/1.111788 10.1063/1.103561 10.1016/0038-1098(92)90815-Q 10.1143/JJAP.32.2722 10.1063/1.104512 10.1103/PhysRevA.39.5409 10.1063/1.93920 10.1063/1.354248 10.1007/BF00278169 10.1007/BF02652104 10.1103/PhysRevLett.57.1016 10.1063/1.350839 10.1103/PhysRevLett.47.1400 10.1016/0022-0248(85)90029-6 |
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Keywords | Finite diffusion length model Semiconductor materials Porous materials Fractals Computerized simulation Nanostructures Structural models Anodizing Nonmetals Morphology Silicon Electrochemical reaction Diffusion limited aggregation |
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SubjectTerms | Chemistry Clusters, nanoparticles, and nanocrystalline materials Colloidal state and disperse state Condensed matter: structure, mechanical and thermal properties Disordered solids Disperse systems Exact sciences and technology Fractals; macroscopic aggregates (including diffusion-limited aggregates) Fullerenes and fullerene-related materials General and physical chemistry Physics Porous materials Structure of solids and liquids; crystallography |
Title | Computational modeling of nanostructured porous silicon |
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