Computational modeling of nanostructured porous silicon

• Published in: Nanostructured materials Vol. 5; no. 1; pp. 87 - 94
• Main Authors: Vadjikar, R.M., Chandorkar, A.N., Sharma, D., Venkatachalam, S.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Science 1995; Elsevier
• Subjects: Chemistry; Clusters, nanoparticles, and nanocrystalline materials; Colloidal state and disperse state; Condensed matter: structure, mechanical and thermal properties; Disordered solids; Disperse systems; Exact sciences and technology; Fractals; macroscopic aggregates (including diffusion-limited aggregates); Fullerenes and fullerene-related materials; General and physical chemistry; Physics; Porous materials; Structure of solids and liquids; crystallography; Finite diffusion length model; Semiconductor materials; Porous materials; Fractals; Computerized simulation; Nanostructures; Structural models; Anodizing; Nonmetals; Morphology; Silicon; Electrochemical reaction; Diffusion limited aggregation
• ISSN: 0965-9773; 1872-9150
• DOI: 10.1016/0965-9773(95)00004-X

The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a nearly constant density away from the interface regions. The variation of number of particles with distance is linear on a double log plot, in the regions away from interfaces. We report that the estimation of the width of the active region between the porous and the bulk lattice can be made by observing the transition from a region of constant slope to a region of zero slope on the log-log plot of number of aggregating particles versus distance.