Electrical characteristics of insulating aluminum nitride MIS nanostructures

• Published in: Applied surface science Vol. 258; no. 1; pp. 419 - 424
• Main Authors: Abdallah, Bassam, Al-Khawaja, Sameer, Alkhawwam, Anas
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.10.2011; Elsevier
• Subjects: Aluminum nitride; Capacitance; Chemical vapor deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Dielectric constant; Electric potential; Exact sciences and technology; Film thickness; MIS structure; Nanostructure; Physics; Silicon substrates; Texture; Trapped charges; MIS structure; Dielectric constant; Trapped charges; Aluminum nitride; MIS structures; Aluminium; Nanostructures; Permittivity

► We study the insulating properties of high-quality aluminum nitride thin films. ► The films exhibited (0 0 2) preferential orientation and were prepared as MIS. ► The dielectric constant has been found to depend on texture and thickness of films. ► Trapped charges at interface were estimated to be...