Electrical characteristics of insulating aluminum nitride MIS nanostructures

► We study the insulating properties of high-quality aluminum nitride thin films. ► The films exhibited (0 0 2) preferential orientation and were prepared as MIS. ► The dielectric constant has been found to depend on texture and thickness of films. ► Trapped charges at interface were estimated to be...

Full description

Saved in:
Bibliographic Details
Published inApplied surface science Vol. 258; no. 1; pp. 419 - 424
Main Authors Abdallah, Bassam, Al-Khawaja, Sameer, Alkhawwam, Anas
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.10.2011
Elsevier
Subjects
Online AccessGet full text

Cover

Loading…
Abstract ► We study the insulating properties of high-quality aluminum nitride thin films. ► The films exhibited (0 0 2) preferential orientation and were prepared as MIS. ► The dielectric constant has been found to depend on texture and thickness of films. ► Trapped charges at interface were estimated to be of the order of 10 10 cm −2 eV −1. Capacitance–voltage measurements of high quality PECVD and MBE grown aluminum nitride (AlN) thin films have been performed. The prepared films have shown polycrystalline (0 0 2)-preferential orientation, and were deposited on p-type Si (1 0 0) substrates with Pt forming the metal gate in a metal–insulator–semiconductor (MIS) configuration. The structure, crystallinity, texture and insulating properties have been found to depend on film thickness and were substantially influenced by the increase of the thickness. C– V measurements of the epitaxial and PECVD films were carried out and their insulating characteristics with increasing thickness (200–1000 nm) were investigated. The epitaxial films exhibited no hysteresis in capacitance behaviour, owing to better crystalline quality over the PECVD grown ones. Capacitance curves versus bias voltage have also been acquired at different temperatures; 10 K, 30 K and 50 K for deposited polycrystalline AlN films of (0 0 2) orientation. We have found that the defects trapped in the Pt/AlN/Si structure played a key role in dominating the overall behaviour of the C– V measurement curves. The trapped charges at the interface between the AlN insulating film and Si substrate caused the capacitance characteristics to shift to negative voltages, and the estimated charge density was of the order of 10 10 and 10 8 cm −2 eV −1 for the PECVD and epitaxial samples respectively. The I– V measurements referred to space-charge conduction mechanism, and the deduced leakage current was found to be of the order of 10 −9 A at 200 nm film thickness.
AbstractList ► We study the insulating properties of high-quality aluminum nitride thin films. ► The films exhibited (0 0 2) preferential orientation and were prepared as MIS. ► The dielectric constant has been found to depend on texture and thickness of films. ► Trapped charges at interface were estimated to be of the order of 10 10 cm −2 eV −1. Capacitance–voltage measurements of high quality PECVD and MBE grown aluminum nitride (AlN) thin films have been performed. The prepared films have shown polycrystalline (0 0 2)-preferential orientation, and were deposited on p-type Si (1 0 0) substrates with Pt forming the metal gate in a metal–insulator–semiconductor (MIS) configuration. The structure, crystallinity, texture and insulating properties have been found to depend on film thickness and were substantially influenced by the increase of the thickness. C– V measurements of the epitaxial and PECVD films were carried out and their insulating characteristics with increasing thickness (200–1000 nm) were investigated. The epitaxial films exhibited no hysteresis in capacitance behaviour, owing to better crystalline quality over the PECVD grown ones. Capacitance curves versus bias voltage have also been acquired at different temperatures; 10 K, 30 K and 50 K for deposited polycrystalline AlN films of (0 0 2) orientation. We have found that the defects trapped in the Pt/AlN/Si structure played a key role in dominating the overall behaviour of the C– V measurement curves. The trapped charges at the interface between the AlN insulating film and Si substrate caused the capacitance characteristics to shift to negative voltages, and the estimated charge density was of the order of 10 10 and 10 8 cm −2 eV −1 for the PECVD and epitaxial samples respectively. The I– V measurements referred to space-charge conduction mechanism, and the deduced leakage current was found to be of the order of 10 −9 A at 200 nm film thickness.
Capacitance-voltage measurements of high quality PECVD and MBE grown aluminum nitride (AlN) thin films have been performed. The prepared films have shown polycrystalline (002)-preferential orientation, and were deposited on p-type Si (100) substrates with Pt forming the metal gate in a metal-insulator-semiconductor (MIS) configuration. The structure, crystallinity, texture and insulating properties have been found to depend on film thickness and were substantially influenced by the increase of the thickness. C-V measurements of the epitaxial and PECVD films were carried out and their insulating characteristics with increasing thickness (200-1000nm) were investigated. The epitaxial films exhibited no hysteresis in capacitance behaviour, owing to better crystalline quality over the PECVD grown ones. Capacitance curves versus bias voltage have also been acquired at different temperatures; 10K, 30K and 50K for deposited polycrystalline AlN films of (002) orientation. We have found that the defects trapped in the Pt/AlN/Si structure played a key role in dominating the overall behaviour of the C-V measurement curves. The trapped charges at the interface between the AlN insulating film and Si substrate caused the capacitance characteristics to shift to negative voltages, and the estimated charge density was of the order of 1010and 108cm-2eV-1for the PECVD and epitaxial samples respectively. The I-V measurements referred to space-charge conduction mechanism, and the deduced leakage current was found to be of the order of 10-9A at 200nm film thickness.
Author Alkhawwam, Anas
Abdallah, Bassam
Al-Khawaja, Sameer
Author_xml – sequence: 1
  givenname: Bassam
  surname: Abdallah
  fullname: Abdallah, Bassam
– sequence: 2
  givenname: Sameer
  surname: Al-Khawaja
  fullname: Al-Khawaja, Sameer
  email: pscientific@aec.org.sy
– sequence: 3
  givenname: Anas
  surname: Alkhawwam
  fullname: Alkhawwam, Anas
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24708536$$DView record in Pascal Francis
BookMark eNp9kE1LAzEQhoNUsFX_gYe9CF52zccmu3sRpFQtVDyo55BOspqyzdbMruC_N6XFozAwh3neGeaZkUnogyPkitGCUaZuN4XZ4YhQcMpYQeuCseaETFldiVzKupyQacKavBSCn5EZ4oZSxtN0SlaLzsEQPZgug08TDQwuehw8YNa3mQ84dmbw4SMz3bj1YdxmwSfeuux5-ZoFE3oc4gjDGB1ekNPWdOguj_2cvD8s3uZP-erlcTm_X-UgVDPklbXrkislUzVyzR1IKqykYNetcXXLq6pqWUuhrpQRhjNrgTViLS2lqpRWnJObw95d7L9Gh4PeegTXdSa4fkTNVMUEaxRvEloeUIg9YnSt3kW_NfFHM6r38vRGH-TpvTxNa53kpdj18YLBpKaNJoDHvywvK1pLoRJ3d-Bcevfbu6gRvAvgrI_Jq7a9___QL1MwihU
CitedBy_id crossref_primary_10_1108_WJE_06_2020_0200
crossref_primary_10_1007_s11801_023_2004_6
crossref_primary_10_1088_1757_899X_93_1_012051
crossref_primary_10_1016_j_heliyon_2024_e27606
crossref_primary_10_1039_D0RA05134A
crossref_primary_10_1007_s00542_015_2799_6
crossref_primary_10_1049_nde2_12076
crossref_primary_10_1063_1_4768951
crossref_primary_10_1051_epjap_2015140163
crossref_primary_10_1016_j_mssp_2020_105567
crossref_primary_10_1016_j_sna_2015_01_032
crossref_primary_10_1016_j_tsf_2018_09_016
crossref_primary_10_1088_0022_3727_48_40_405301
crossref_primary_10_1007_s13391_017_6111_z
crossref_primary_10_1016_j_tsf_2014_04_009
Cites_doi 10.1016/j.sna.2005.03.066
10.1007/s10853-009-3847-3
10.1109/TED.2003.813231
10.1051/epjap:2008082
10.1016/j.tsf.2007.03.006
10.1016/j.sse.2008.04.009
10.1016/j.susc.2009.10.022
10.1007/s10854-006-0001-8
10.1063/1.124055
10.4028/www.scientific.net/MSF.264-268.877
10.1016/S0040-6090(01)01435-3
10.1063/1.372046
10.1088/1742-6596/113/1/012050
ContentType Journal Article
Copyright 2011 Elsevier B.V.
2015 INIST-CNRS
Copyright_xml – notice: 2011 Elsevier B.V.
– notice: 2015 INIST-CNRS
DBID IQODW
AAYXX
CITATION
7QF
7SR
7U5
8BQ
8FD
JG9
L7M
DOI 10.1016/j.apsusc.2011.08.119
DatabaseName Pascal-Francis
CrossRef
Aluminium Industry Abstracts
Engineered Materials Abstracts
Solid State and Superconductivity Abstracts
METADEX
Technology Research Database
Materials Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Materials Research Database
Engineered Materials Abstracts
Aluminium Industry Abstracts
Technology Research Database
Solid State and Superconductivity Abstracts
Advanced Technologies Database with Aerospace
METADEX
DatabaseTitleList
Materials Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1873-5584
EndPage 424
ExternalDocumentID 10_1016_j_apsusc_2011_08_119
24708536
S0169433211013675
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1RT
1~.
1~5
23M
4.4
457
4G.
5GY
5VS
6J9
7-5
71M
8P~
9JN
AABNK
AABXZ
AACTN
AAEDT
AAEDW
AAEPC
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AARLI
AAXUO
ABFNM
ABFRF
ABJNI
ABMAC
ABNEU
ABXDB
ABXRA
ABYKQ
ACBEA
ACDAQ
ACFVG
ACGFO
ACGFS
ACNNM
ACRLP
ADBBV
ADECG
ADEZE
ADMUD
AEBSH
AEFWE
AEKER
AENEX
AEZYN
AFKWA
AFRZQ
AFTJW
AFZHZ
AGHFR
AGUBO
AGYEJ
AHHHB
AIEXJ
AIKHN
AITUG
AIVDX
AJBFU
AJOXV
AJSZI
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
CS3
EBS
EFJIC
EFLBG
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FEDTE
FGOYB
FIRID
FLBIZ
FNPLU
FYGXN
G-2
G-Q
GBLVA
HMV
HVGLF
HZ~
IHE
J1W
KOM
M24
M38
M41
MAGPM
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SCB
SDF
SDG
SDP
SES
SEW
SMS
SPC
SPCBC
SPD
SPG
SSK
SSM
SSQ
SSZ
T5K
TN5
WH7
WUQ
XFK
XPP
ZMT
~02
~G-
AAPBV
ABPIF
ABPTK
IQODW
VOH
AAXKI
AAYXX
ACRPL
AFJKZ
AKRWK
CITATION
7QF
7SR
7U5
8BQ
8FD
JG9
L7M
ID FETCH-LOGICAL-c369t-7ddb4266566595b2ec503d50cdbfae8f2777f1f0c876a3a21ddc193b5d00645d3
IEDL.DBID AIKHN
ISSN 0169-4332
IngestDate Fri Oct 25 07:04:09 EDT 2024
Fri Dec 06 01:06:30 EST 2024
Sun Oct 29 17:07:49 EDT 2023
Fri Feb 23 02:24:55 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 1
Keywords MIS structure
Dielectric constant
Trapped charges
Aluminum nitride
MIS structures
Aluminium
Nanostructures
Permittivity
Language English
License CC BY 4.0
https://www.elsevier.com/tdm/userlicense/1.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c369t-7ddb4266566595b2ec503d50cdbfae8f2777f1f0c876a3a21ddc193b5d00645d3
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
PQID 1671319629
PQPubID 23500
PageCount 6
ParticipantIDs proquest_miscellaneous_1671319629
crossref_primary_10_1016_j_apsusc_2011_08_119
pascalfrancis_primary_24708536
elsevier_sciencedirect_doi_10_1016_j_apsusc_2011_08_119
PublicationCentury 2000
PublicationDate 2011-10-15
PublicationDateYYYYMMDD 2011-10-15
PublicationDate_xml – month: 10
  year: 2011
  text: 2011-10-15
  day: 15
PublicationDecade 2010
PublicationPlace Amsterdam
PublicationPlace_xml – name: Amsterdam
PublicationTitle Applied surface science
PublicationYear 2011
Publisher Elsevier B.V
Elsevier
Publisher_xml – name: Elsevier B.V
– name: Elsevier
References Engelmark, Westlinder, Iriarte, Katardjiev, Olsson (bib0005) 2003; 50
Nouveau, Djouadi, Banach, Sanjines, Levy (bib0055) 2001; 398
Scherrer (bib0065) 1918; 26
Abdallah, Duquenne, Besland, Gautron, Jouan, Tessier, Brault, Cordier, Djouadi (bib0050) 2008; 43
Olivares, Iborra, Clement, Vergara, Sangrador, Sanz-Hervás (bib0010) 2005; 123–124
Dubois, Mulart (bib0025) 1999; 74
Sanchez, Abdallah, Tristant, Dublanche-Tixier, Djouadi, Besland, Jouan, Alles (bib0045) 2009; 44
Abdallah, Chala, Jouan, Besland, Djouadi (bib0070) 2007; 515
La Spina, Iborra, Schellevis, Clement, Olivares, Nanver (bib0015) 2008; 52
Deen, Pascal (bib0080) 2006; 17
Zetterling, Oestling, Harris, Nordell, Wongchotigul, Spencer (bib0040) 1998; 264
Dubois, Muralt, Plessky (bib0020) 1999; 2
Lu, Ren, Chong, Cheong, Show, Wang (bib0035) 2000; 87
Ben el Mekki, Djouadi, Guiot, Mortet, Pascallon, Stambouli, Bouchier, Mestres, Nouet (bib0060) 1999; 93
Simeonov, Bakalova, Szekeres, Kafedjiijska, Grigorescu, Socol, Mihailescu (bib0085) 2008; 113
Deen, Pascal (bib0075) 2006
Placidi, Pérez-Tomás, Moreno, Frayssinet, Semond, Constant, Godignon, Mestres, Crespi, Millán (bib0030) 2010; 604
Abdallah (10.1016/j.apsusc.2011.08.119_bib0070) 2007; 515
Dubois (10.1016/j.apsusc.2011.08.119_bib0025) 1999; 74
Nouveau (10.1016/j.apsusc.2011.08.119_bib0055) 2001; 398
La Spina (10.1016/j.apsusc.2011.08.119_bib0015) 2008; 52
Olivares (10.1016/j.apsusc.2011.08.119_bib0010) 2005; 123–124
Ben el Mekki (10.1016/j.apsusc.2011.08.119_bib0060) 1999; 93
Placidi (10.1016/j.apsusc.2011.08.119_bib0030) 2010; 604
Sanchez (10.1016/j.apsusc.2011.08.119_bib0045) 2009; 44
Dubois (10.1016/j.apsusc.2011.08.119_bib0020) 1999; 2
Deen (10.1016/j.apsusc.2011.08.119_bib0080) 2006; 17
Deen (10.1016/j.apsusc.2011.08.119_bib0075) 2006
Engelmark (10.1016/j.apsusc.2011.08.119_bib0005) 2003; 50
Abdallah (10.1016/j.apsusc.2011.08.119_bib0050) 2008; 43
Simeonov (10.1016/j.apsusc.2011.08.119_bib0085) 2008; 113
Zetterling (10.1016/j.apsusc.2011.08.119_bib0040) 1998; 264
Lu (10.1016/j.apsusc.2011.08.119_bib0035) 2000; 87
Scherrer (10.1016/j.apsusc.2011.08.119_bib0065) 1918; 26
References_xml – volume: 52
  start-page: 1359
  year: 2008
  ident: bib0015
  publication-title: Solid-State Electron.
  contributor:
    fullname: Nanver
– volume: 74
  start-page: 3032
  year: 1999
  ident: bib0025
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Mulart
– volume: 604
  start-page: 63
  year: 2010
  ident: bib0030
  publication-title: Surf. Sci.
  contributor:
    fullname: Millán
– volume: 264
  start-page: 877
  year: 1998
  ident: bib0040
  publication-title: Mater. Sci. Forum
  contributor:
    fullname: Spencer
– volume: 123–124
  start-page: 590
  year: 2005
  ident: bib0010
  publication-title: Sens. Actuators A
  contributor:
    fullname: Sanz-Hervás
– volume: 87
  start-page: 1540
  year: 2000
  ident: bib0035
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Wang
– start-page: 409
  year: 2006
  end-page: 438
  ident: bib0075
  publication-title: The Springer Handbook of Electronic and Photonic Materials Part B
  contributor:
    fullname: Pascal
– volume: 515
  start-page: 7105
  year: 2007
  ident: bib0070
  publication-title: Thin Solid Films
  contributor:
    fullname: Djouadi
– volume: 398
  start-page: 490
  year: 2001
  ident: bib0055
  publication-title: Thin Solid Films
  contributor:
    fullname: Levy
– volume: 113
  start-page: 012050
  year: 2008
  ident: bib0085
  publication-title: J. Phys. Conf. Ser.
  contributor:
    fullname: Mihailescu
– volume: 2
  start-page: 907
  year: 1999
  ident: bib0020
  publication-title: Proc. IEEE Ultrason. Symp.
  contributor:
    fullname: Plessky
– volume: 17
  start-page: 549
  year: 2006
  ident: bib0080
  publication-title: J. Mater. Sci. Mater. Electron.
  contributor:
    fullname: Pascal
– volume: 50
  start-page: 1214
  year: 2003
  ident: bib0005
  publication-title: IEEE Trans. Electron. Devices
  contributor:
    fullname: Olsson
– volume: 44
  start-page: 6125
  year: 2009
  ident: bib0045
  publication-title: J. Mater. Sci.
  contributor:
    fullname: Alles
– volume: 93
  start-page: 116
  year: 1999
  ident: bib0060
  publication-title: Surf. Coat. Technol.
  contributor:
    fullname: Nouet
– volume: 43
  start-page: 309
  year: 2008
  ident: bib0050
  publication-title: Eur. Phys. J. Appl. Phys.
  contributor:
    fullname: Djouadi
– volume: 26
  start-page: 98
  year: 1918
  end-page: 100
  ident: bib0065
  publication-title: Nachr. Ges. Wiss. Göttingen
  contributor:
    fullname: Scherrer
– volume: 123–124
  start-page: 590
  year: 2005
  ident: 10.1016/j.apsusc.2011.08.119_bib0010
  publication-title: Sens. Actuators A
  doi: 10.1016/j.sna.2005.03.066
  contributor:
    fullname: Olivares
– volume: 44
  start-page: 6125
  year: 2009
  ident: 10.1016/j.apsusc.2011.08.119_bib0045
  publication-title: J. Mater. Sci.
  doi: 10.1007/s10853-009-3847-3
  contributor:
    fullname: Sanchez
– volume: 50
  start-page: 1214
  issue: 5
  year: 2003
  ident: 10.1016/j.apsusc.2011.08.119_bib0005
  publication-title: IEEE Trans. Electron. Devices
  doi: 10.1109/TED.2003.813231
  contributor:
    fullname: Engelmark
– volume: 43
  start-page: 309
  year: 2008
  ident: 10.1016/j.apsusc.2011.08.119_bib0050
  publication-title: Eur. Phys. J. Appl. Phys.
  doi: 10.1051/epjap:2008082
  contributor:
    fullname: Abdallah
– volume: 26
  start-page: 98
  year: 1918
  ident: 10.1016/j.apsusc.2011.08.119_bib0065
  publication-title: Nachr. Ges. Wiss. Göttingen
  contributor:
    fullname: Scherrer
– volume: 515
  start-page: 7105
  year: 2007
  ident: 10.1016/j.apsusc.2011.08.119_bib0070
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2007.03.006
  contributor:
    fullname: Abdallah
– start-page: 409
  year: 2006
  ident: 10.1016/j.apsusc.2011.08.119_bib0075
  contributor:
    fullname: Deen
– volume: 52
  start-page: 1359
  year: 2008
  ident: 10.1016/j.apsusc.2011.08.119_bib0015
  publication-title: Solid-State Electron.
  doi: 10.1016/j.sse.2008.04.009
  contributor:
    fullname: La Spina
– volume: 2
  start-page: 907
  year: 1999
  ident: 10.1016/j.apsusc.2011.08.119_bib0020
  publication-title: Proc. IEEE Ultrason. Symp.
  contributor:
    fullname: Dubois
– volume: 93
  start-page: 116
  year: 1999
  ident: 10.1016/j.apsusc.2011.08.119_bib0060
  publication-title: Surf. Coat. Technol.
  contributor:
    fullname: Ben el Mekki
– volume: 604
  start-page: 63
  year: 2010
  ident: 10.1016/j.apsusc.2011.08.119_bib0030
  publication-title: Surf. Sci.
  doi: 10.1016/j.susc.2009.10.022
  contributor:
    fullname: Placidi
– volume: 17
  start-page: 549
  issue: 8
  year: 2006
  ident: 10.1016/j.apsusc.2011.08.119_bib0080
  publication-title: J. Mater. Sci. Mater. Electron.
  doi: 10.1007/s10854-006-0001-8
  contributor:
    fullname: Deen
– volume: 74
  start-page: 3032
  issue: 20
  year: 1999
  ident: 10.1016/j.apsusc.2011.08.119_bib0025
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.124055
  contributor:
    fullname: Dubois
– volume: 264
  start-page: 877
  issue: 2
  year: 1998
  ident: 10.1016/j.apsusc.2011.08.119_bib0040
  publication-title: Mater. Sci. Forum
  doi: 10.4028/www.scientific.net/MSF.264-268.877
  contributor:
    fullname: Zetterling
– volume: 398
  start-page: 490
  year: 2001
  ident: 10.1016/j.apsusc.2011.08.119_bib0055
  publication-title: Thin Solid Films
  doi: 10.1016/S0040-6090(01)01435-3
  contributor:
    fullname: Nouveau
– volume: 87
  start-page: 1540
  issue: 3
  year: 2000
  ident: 10.1016/j.apsusc.2011.08.119_bib0035
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.372046
  contributor:
    fullname: Lu
– volume: 113
  start-page: 012050
  year: 2008
  ident: 10.1016/j.apsusc.2011.08.119_bib0085
  publication-title: J. Phys. Conf. Ser.
  doi: 10.1088/1742-6596/113/1/012050
  contributor:
    fullname: Simeonov
SSID ssj0012873
Score 2.1685438
Snippet ► We study the insulating properties of high-quality aluminum nitride thin films. ► The films exhibited (0 0 2) preferential orientation and were prepared as...
Capacitance-voltage measurements of high quality PECVD and MBE grown aluminum nitride (AlN) thin films have been performed. The prepared films have shown...
SourceID proquest
crossref
pascalfrancis
elsevier
SourceType Aggregation Database
Index Database
Publisher
StartPage 419
SubjectTerms Aluminum nitride
Capacitance
Chemical vapor deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Dielectric constant
Electric potential
Exact sciences and technology
Film thickness
MIS structure
Nanostructure
Physics
Silicon substrates
Texture
Trapped charges
Title Electrical characteristics of insulating aluminum nitride MIS nanostructures
URI https://dx.doi.org/10.1016/j.apsusc.2011.08.119
https://search.proquest.com/docview/1671319629
Volume 258
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1La8JAEB58XFpK6ZPah2yh11STdU1yFFG0rV6s4G3ZJ1hoIlWv_e2dzUMqLRR6DYQNM9lvZphvvgF4UFJGLAqspyNjvY4U1otkJnendWytNqF0g8KTaXc07zwt2KIC_XIWxtEqC-zPMT1D6-JJq7Bma7VctmZOR8Spb2EAc7pjrAp1DEeuV1vvjZ9H010zAYsCmkt8x25AKCgn6DKal8BidK12Wp6-k9z5PUIdrcQa7WbzhRc_sDsLSMMTOC4ySdLLP_YUKiY5g8Nv-oLn8DLIltw4PxC1r8xMUksyHrpwvGciEKOWyfad4A3_WGpDJuMZSUSS5vqyWyzKL2A-HLz2R16xPsFTtBtvvFBr6eIvJmwsZjIwirWpZm2lpRUmskEYhta3bYWAKKgIfK0VpnOSaZenME0voZakibkCQn1fMkspZYJ2FKMyjhR6P9JMhTamugFeaTK-ylUyeEkfe-O5ibkzMW9HWHPEDQhLu_I9b3ME8j_ebO65YXdc0Akxe6TdBtyXfuF4U1z7QyQm3a6538WCHAEniK__ffwNHAQFCdBnt1BDH5g7zEo2sgnVx0-_Wfx7X3q15Lg
link.rule.ids 314,780,784,4502,24116,27924,27925,45585,45679
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEB5qPaiI-MT6qCt4jW2y2SY5SrG02vbSFnpb9gkVTIttr_52Z_MoFgXBa0jYMLP7zTfszDcAD0rKmMWB9XRsrBdKYb1YZnJ3WifWahNJ1yg8GLa6k_BlyqYVaJe9MK6sssD-HNMztC6eNAprNhazWWPkdESc-hYGMKc7xnZgN2TIfnFTP35u6jwQf_NrZnzbtQcFZf9cVuQlMBVdqo2Sp-8Ed36PT4cLsUSr2XzcxQ_kzsJR5xiOCh5JnvJfPYGKSU_h4Ju64Bn0n7MRN84LRG3rMpO5JVkVunBVz0QgQs3S9TvB8_0x04YMeiOSinSeq8uuMSU_h0nnedzuesXwBE_RVrLyIq2li75I11jCZGAUa1LNmkpLK0xsgyiKrG-bCuFQUBH4Wiskc5Jpx1KYphdQTeepuQRCfV8ySyllgoaKUZnECn0fa6Yim1BdA680GV_kGhm8LB5747mJuTMxb8aYcSQ1iEq78i1fc4TxP76sb7lhs1wQRsgdaasG96VfOJ4Td_khUjNfL7nfwnQc4SZIrv69_B3sdceDPu_3hq_XsB8U5YA-u4Eq-sPcIj9ZyXq2_74AjqHlkQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Electrical+characteristics+of+insulating+aluminum+nitride+MIS+nanostructures&rft.jtitle=Applied+surface+science&rft.au=Abdallah%2C+Bassam&rft.au=Al-Khawaja%2C+Sameer&rft.au=Alkhawwam%2C+Anas&rft.date=2011-10-15&rft.issn=0169-4332&rft.volume=258&rft.issue=1&rft.spage=419&rft.epage=424&rft_id=info:doi/10.1016%2Fj.apsusc.2011.08.119&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_apsusc_2011_08_119
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0169-4332&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0169-4332&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0169-4332&client=summon