One-pot surface modification of poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

• Published in: Organic electronics Vol. 33; pp. 263 - 268
• Main Authors: Yoo, Sungmi, Yi, Mi Hye, Kim, Yun Ho, Jang, Kwang-Suk
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2016
• Subjects: Gate dielectric; Gate insulator; Organic thin-film transistor; Poly(ethylene-alt-maleic anhydride); Poly(maleic anhydride-alt-1-octadecene); Gate insulator; Poly(ethylene-alt-maleic anhydride); Gate dielectric; Poly(maleic anhydride-alt-1-octadecene); Organic thin-film transistor

This study investigates the one-pot surface modification of poly(ethylene-alt-maleic anhydride) (PEMA) gate insulators crosslinked with 1,5-naphthalenediamine (1,5-NDA) for enhancing the device performance of low-voltage dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) organic thin-film transis...