Electrical resistivity studies of thermally evaporated manganese–rhenium thin films

• Published in: Cryogenics (Guildford) Vol. 43; no. 8; pp. 459 - 462
• Main Author: Boakye, F.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.08.2003; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electrical resistivity; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Kondo scattering; Metal and metallic alloys; Metals and metallic alloys; Metals. Metallurgy; Physics; Thin films; Thin films; Kondo scattering; Electrical resistivity; Rhenium additions; Kondo scattering: Electrical resistivity; Electrical conductivity; Impurity density; Doping; Conduction electron; Spin fluctuations; Experimental study; Vapor deposition; Kondo effect; Transition elements; Electron spin interaction; Manganese
• ISSN: 0011-2275; 1879-2235
• DOI: 10.1016/S0011-2275(03)00111-5

Electrical resistivity studies have been carried out on thermally evaporated Mn 100− x Re x thin films (with X=0.1–0.5 and 1 at.% Re) over the temperature range from 300 to 1.4 K using the van der Pauw four probe technique. A resistivity minimum a notable characteristic of α-Mn was found in all the specimens with a shift of T min corresponding to the resistivity minimum to upper values as the concentration of Re increases. The results show a tendency towards saturation of the resistivity as the temperature approaches zero implying a Kondo scattering mechanism in the samples. The shift of T min and the characteristic Kondo temperature T K to upper values may be explained in terms of the Kondo scattering.