High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD

A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures i...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 14; no. 12; pp. 545 - 547
Main Authors Shealy, J.B., Hashemi, M.M., Kiziloglu, K., DenBaars, S.P., Mishra, U.K., Liu, T.K., Brown, J.J., Lui, M.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.12.1993
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Current density
Electric breakdown
Electrodes
Electronics
Electrons
Etching
Exact sciences and technology
Gate leakage
HEMTs
Microelectronic fabrication (materials and surfaces technology)
MOCVD
Molecular beam epitaxial growth
Ohmic contacts
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ternary compound
Ohmic contact
Electrical properties
Experimental study
Chemical vapor deposition
Gallium Arsenides
Breakdown voltage
High electron mobility transistor
Aluminium Arsenides
Microelectronic fabrication
Modulation
Junction
Indium Arsenides
Online AccessGet full text

Cover

More Information
Summary:A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures is dependent on the multiplication of electrons injected from the source (channel current) and the gate (gate leakage) into the channel. In addition, holes are generated by high fields at the drain and are injected back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. Both have been achieved by incorporating a p/sup +/-2DEG junction as the gate that modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1- mu m-gate-length devices fabricated have two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.260784