Temperature-dependent band gaps in several semiconductors: from the role of electron-phonon renormalization
Temperature dependence of band gap is one of the most fundamental properties for semiconductors, and has strong influences on many applications. The renormalization of the band gap at finite temperatures is due to the lattice expansion and the phonon-induced atomic vibrations. In this work, we apply...
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Published in | Journal of physics. Condensed matter Vol. 32; no. 47; pp. 475503 - 475510 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
England
IOP Publishing
11.11.2020
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Subjects | |
Online Access | Get full text |
ISSN | 0953-8984 1361-648X 1361-648X |
DOI | 10.1088/1361-648X/aba45d |
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