High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

• Published in: Journal of materials science & technology Vol. 28; no. 2; pp. 132 - 136
• Main Authors: Zhou, Wei, Li, Xiang, Xia, Sujing, Yang, Jie, Tang, Wu, Lau, K.M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2012
• Subjects: Arrays; Atomic force microscopy; Density; Dislocations; GaAs衬底; Gallium arsenide; Gallium arsenides; Hole mobility; Interfacial misfit dislocations; Metalorganic chemical vapour deposition; Misfit dislocation; MOCVD生长; Molecular beam epitaxy; Roughness; 化学气相沉积法; 半绝缘砷化镓; 国际货币基金组织; 失配位错; 锑化镓; 阵列; Interfacial misfit dislocations; Misfit dislocation; Hole mobility; Metalorganic chemical vapour deposition

The structural property of GaSb epilayers grown on semi-insulator GaAs （001） substrate by metalorganic chemical vapor deposition （MOCVD） using Triethylgallium （TEGa） and trimethylantimony （TMSb）, was investigated by variation of the Sb：Ga （V/Ill） ratio. An optimum V/Ill ratio of 1.4 was determined i...