High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array - Zhou, Wei; Li, Xiang; Xia, Sujing; Yang, Jie; Tang, Wu; Lau, K.M. (Journal of materials science & technology, 2012)
Keywords: Arrays; Atomic force microscopy; Density; Dislocations; GaAs衬底; Gallium arsenide; Gallium arsenides; Hole mobility; Interfacial misfit dislocations; Metalorganic chemical vapour deposition; Misfit dislocation; MOCVD生长; Molecular beam epitaxy; Roughness; 化学气相沉积法; 半绝缘砷化镓; 国际货币基金组织; 失配位错; 锑化镓; 阵列; Interfacial misfit dislocations; Misfit dislocation; Hole mobility; Metalorganic chemical vapour deposition