APA (7th ed.) Citation

Zhou, W., Li, X., Xia, S., Yang, J., Tang, W., & Lau, K. (2012). High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array. Journal of materials science & technology, 28(2), 132-136. https://doi.org/10.1016/S1005-0302(12)60033-4

Chicago Style (17th ed.) Citation

Zhou, Wei, Xiang Li, Sujing Xia, Jie Yang, Wu Tang, and K.M Lau. "High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD Through Interfacial Misfit Dislocations Array." Journal of Materials Science & Technology 28, no. 2 (2012): 132-136. https://doi.org/10.1016/S1005-0302(12)60033-4.

MLA (9th ed.) Citation

Zhou, Wei, et al. "High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD Through Interfacial Misfit Dislocations Array." Journal of Materials Science & Technology, vol. 28, no. 2, 2012, pp. 132-136, https://doi.org/10.1016/S1005-0302(12)60033-4.