Energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures

• Published in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 33; no. 5
• Main Authors: Rifai, A., Maikap, S., YOSHIO NAKAMURA
• Format: Journal Article
• Language: English; Japanese
• Published: American Vacuum Society 01.09.2015

The energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures were constructed based on the measurement of the band parameters by reflection electron energy-loss spectroscopy and x-ray photoelectron spectroscopy. The valence band offset at HfO2/Al2O3 interface was obtained t...