Correlation between Filled Via and Produced Cuprous Ion Concentration by Reverse Current Waveform
To enable low power consumption and the access speed increase, three dimensional packaging of semiconductor chips has been proposed. In particular, a high-aspect ratio through silicon via (TSV) allows short chip to chip interconnection. In this study, we studied the role of produced cuprous ion in v...
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Published in | Journal of the Electrochemical Society Vol. 160; no. 6; pp. D256 - D259 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Electrochemical Society
01.01.2013
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Online Access | Get full text |
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