Correlation between Filled Via and Produced Cuprous Ion Concentration by Reverse Current Waveform

To enable low power consumption and the access speed increase, three dimensional packaging of semiconductor chips has been proposed. In particular, a high-aspect ratio through silicon via (TSV) allows short chip to chip interconnection. In this study, we studied the role of produced cuprous ion in v...

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 160; no. 6; pp. D256 - D259
Main Authors Hayashi, Taro, Kondo, Kazuo, Saito, Takeyasu, Okamoto, Naoki, Yokoi, Masayuki, Takeuchi, Minoru, Bunya, Masaru, Marunaka, Masao, Tsuchiya, Takayuki
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 01.01.2013
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