Origins of improved carrier multiplication efficiency in elongated semiconductor nanostructures

• Published in: Physical chemistry chemical physics : PCCP Vol. 17; no. 4; pp. 2573 - 2581
• Main Authors: Sills, Andrew, Califano, Marco
• Format: Journal Article
• Language: English
• Published: England 28.01.2015
• Subjects: Carriers; Constants; Cross sections; Electronic structure; Elongation; Nanostructure; Origins; Semiconductors

Nanorod solar cells have been attracting a lot of attention recently, as they have been shown to exhibit a lower carrier multiplication onset and a higher quantum efficiency than quantum dots with similar bandgaps. The underpinning theory for this phenomenon is not yet completely understood, and is...