APA (7th ed.) Citation

Sills, A., & Califano, M. (2015). Origins of improved carrier multiplication efficiency in elongated semiconductor nanostructures. Physical chemistry chemical physics : PCCP, 17(4), 2573-2581. https://doi.org/10.1039/c4cp03706e

Chicago Style (17th ed.) Citation

Sills, Andrew, and Marco Califano. "Origins of Improved Carrier Multiplication Efficiency in Elongated Semiconductor Nanostructures." Physical Chemistry Chemical Physics : PCCP 17, no. 4 (2015): 2573-2581. https://doi.org/10.1039/c4cp03706e.

MLA (9th ed.) Citation

Sills, Andrew, and Marco Califano. "Origins of Improved Carrier Multiplication Efficiency in Elongated Semiconductor Nanostructures." Physical Chemistry Chemical Physics : PCCP, vol. 17, no. 4, 2015, pp. 2573-2581, https://doi.org/10.1039/c4cp03706e.