TEM structural characterization of Sn–Te–O thin films on monocrystalline silicon wafers

• Published in: Thin solid films Vol. 441; no. 1; pp. 25 - 31
• Main Authors: Popova, L.I, Peneva, S.K, Dimitriadis, C.A, Gueorguiev, V.K, Andreev, S.K
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 22.09.2003; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Heterostructures; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tellurium; TEM; Thin film structure and morphology; Tin; Vacuum deposition; Tin; TEM; Heterostructures; Tellurium; Ultrathin films; Inorganic compounds; Semiconductor materials; Ternary compounds; Crystal chemistry; Polycrystals; Tin tellurides; Crystallinity; Crystal growth from vapors; Evaporation; Experimental study; Tellurium oxides; Thin films; Tin oxides; Monocrystals; Lamellar structure; Chemical composition; Codeposition; Microstructure
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(03)00888-5

The structural properties of Sn–Te–O thin films, deposited by co-evaporation of Sn and TeO 2 on monocrystalline Si substrates at room temperature are investigated by transmission electron microscopy analysis. Instead of homogeneous amorphous films, the obtained films are inhomogeneous multilayered structures, with clearly expressed polycrystalline and monocrystalline regions. Some exotic crystalline forms of Sn, Te and SnTe are detected in the layers. The composition and microstructure of the investigated films depend mainly on the Sn/Te ratio, the thickness of the layers and the substrate surface.