Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation - Brugger, S.C.; Schenk, A. (IEEE transactions on electron devices, 2007)
Keywords: Applied sciences; Boltzmann equation; Computer simulation; device simulation; Devices; Diffusion; Distribution functions; Electronics; Exact sciences and technology; generalized drift-diffusion equation; inverse scattering operator; Logic gates; Mathematical model; Molecular electronics, nanoelectronics; Monte Carlo methods; Nanocomposites; Nanomaterials; Nanoscale devices; Nanostructure; Resistors; Scattering; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transport; transport parameters; Monte Carlo method; Boltzmann equation; inverse scattering operator; generalized drift-diffusion equation; Numerical simulation; Diffusion equation; device simulation; Ballistic transport; Drift mobility; Parameter extraction; Nanoelectronics; transport parameters