Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices
Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a thorough study of the effect of deuterium pressure on the characteristics and hot-carrier reliability of MOS devices. N-channel submicron MOS tra...
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Published in | Microelectronic engineering Vol. 56; no. 3; pp. 353 - 358 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
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Amsterdam
Elsevier B.V
01.08.2001
Elsevier Science |
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Abstract | Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a thorough study of the effect of deuterium pressure on the characteristics and hot-carrier reliability of MOS devices. N-channel submicron MOS transistors were annealed in deuterium with various pressures, temperatures and annealing times. It is found that device reliability initially improves as deuterium pressure is increased. It reaches a maximum and then begins to degrade with further increase of pressure. For the devices after hydrogen anneal, device reliability constantly degrades as the hydrogen pressure increases. It is concluded that the benefit of high pressure deuterium processing on device reliability is attributed to improved deuterium incorporation, while annealing-induced interface trap creation can negate the benefit at extreme high pressure. It is further shown that the processing temperature can be lowered with high pressure while still maintaining the deuteration benefit. This is particularly significant for future CMOS technology that requires a reduced thermal budget. |
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AbstractList | Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a thorough study of the effect of deuterium pressure on the characteristics and hot-carrier reliability of MOS devices. N-channel submicron MOS transistors were annealed in deuterium with various pressures, temperatures and annealing times. It is found that device reliability initially improves as deuterium pressure is increased. It reaches a maximum and then begins to degrade with further increase of pressure. For the devices after hydrogen anneal, device reliability constantly degrades as the hydrogen pressure increases. It is concluded that the benefit of high pressure deuterium processing on device reliability is attributed to improved deuterium incorporation, while annealing-induced interface trap creation can negate the benefit at extreme high pressure. It is further shown that the processing temperature can be lowered with high pressure while still maintaining the deuteration benefit. This is particularly significant for future CMOS technology that requires a reduced thermal budget. Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a thorough study of the effect of deuterium pressure on the characteristics and hot-carrier reliability of MOS devices. N-channel submicron MOS transistors were annealed in deuterium with various pressures, temperatures and annealing times. It is found that device reliability initially improves as deuterium pressure is increased. It reaches a maximum and then begins to degrade with further increase of pressure. For the devices after hydrogen anneal, device reliability constantly degrades as the hydrogen pressure increases. It is concluded that the benefit of high pressure deuterium processing on device reliability is attributed to improved deuterium incorporation, while annealing-induced interface trap creation can negate the benefit at extreme high pressure. It is further shown that the processing temperature can be lowered with high pressure while still maintaining the deuteration benefit. This is particularly significant for future CMOS technology that requires a reduced thermal budget. copyright 2001 Elsevier Science B.V. All rights reserved. |
Author | Chen, Zhi Lyding, Joseph W. Kim, Young-Wug Hess, Karl Shah, Samir Suh, Kuwang Pyuk Cheng, Kangguo Lee, Jinju Kim, Young-Kwang |
Author_xml | – sequence: 1 givenname: Kangguo surname: Cheng fullname: Cheng, Kangguo email: cheng@us.ibm.com organization: Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 N. Mathews Ave., Urbana, IL 61801, USA – sequence: 2 givenname: Jinju surname: Lee fullname: Lee, Jinju organization: Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 N. Mathews Ave., Urbana, IL 61801, USA – sequence: 3 givenname: Zhi surname: Chen fullname: Chen, Zhi organization: Department of Electrical Engineering, University of Kentucky, Lexington, KY 40506, USA – sequence: 4 givenname: Samir surname: Shah fullname: Shah, Samir organization: Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 N. Mathews Ave., Urbana, IL 61801, USA – sequence: 5 givenname: Karl surname: Hess fullname: Hess, Karl organization: Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 N. Mathews Ave., Urbana, IL 61801, USA – sequence: 6 givenname: Joseph W. surname: Lyding fullname: Lyding, Joseph W. email: j-lyding@uiuc.edu organization: Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 N. Mathews Ave., Urbana, IL 61801, USA – sequence: 7 givenname: Young-Kwang surname: Kim fullname: Kim, Young-Kwang organization: CPU Division, Samsung Electronics Company, Ltd., Kyungki-Do 449-900, South Korea – sequence: 8 givenname: Young-Wug surname: Kim fullname: Kim, Young-Wug organization: CPU Division, Samsung Electronics Company, Ltd., Kyungki-Do 449-900, South Korea – sequence: 9 givenname: Kuwang Pyuk surname: Suh fullname: Suh, Kuwang Pyuk organization: CPU Division, Samsung Electronics Company, Ltd., Kyungki-Do 449-900, South Korea |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1125300$$DView record in Pascal Francis |
BookMark | eNqFkE1Lw0AQhhepYKv-BCEHET1EZ5PubnISqZ-geFChB2HZTiZ0JU3qblLov3fTFj16mZeBZ2aYZ8QGdVMTYyccLjlwefUWiorzlKtz4BcAQiXxdI8NeabSWAiZDdjwFzlgI--_IPRjyIbs85a6lpztFtHSkfedo6igJdUF1UhRU0Y4N85gz_jWoo9MXUTzpo3ROGfJRY4qa2a2su26xycvr29hw8oi-SO2X5rK0_EuD9nH_d375DF-fn14mtw8x5hK1cYmRUN8jFIJyGYwBm4k0JgbRSEMyJnMshw4lkWCmHDOM4RM5HlCpATJ9JCdbfcuXfPdkW_1wnqkqjI1NZ3XiVQg8iQJoNiC6BrvHZV66ezCuLXmoHuXeuNS96I0cL1xqadh7nR3wHg0VelMjdb_DfNEpAABu95iFJ5dBTnao-09FtYRtrpo7D-HfgDcXIqy |
CODEN | MIENEF |
CitedBy_id | crossref_primary_10_1063_1_5009243 crossref_primary_10_1109_LED_2003_817377 crossref_primary_10_4028_www_scientific_net_MSF_510_511_190 crossref_primary_10_1116_5_0147443 |
Cites_doi | 10.1109/16.658674 10.1109/55.556087 10.1109/55.841302 10.1063/1.116172 10.1109/16.753709 10.1109/16.30938 |
ContentType | Journal Article |
Copyright | 2001 Elsevier Science B.V. 2001 INIST-CNRS |
Copyright_xml | – notice: 2001 Elsevier Science B.V. – notice: 2001 INIST-CNRS |
DBID | IQODW AAYXX CITATION 7SP 7U5 8FD L7M |
DOI | 10.1016/S0167-9317(01)00572-X |
DatabaseName | Pascal-Francis CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Solid State and Superconductivity Abstracts |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Applied Sciences |
EISSN | 1873-5568 |
EndPage | 358 |
ExternalDocumentID | 10_1016_S0167_9317_01_00572_X 1125300 S016793170100572X |
GroupedDBID | --K --M .~1 0R~ 123 1B1 1RT 1~. 1~5 29M 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO AAYFN ABBOA ABFNM ABFRF ABJNI ABMAC ABNEU ABXDB ABXRA ABYKQ ACDAQ ACFVG ACGFO ACGFS ACNNM ACRLP ACZNC ADBBV ADEZE ADJOM ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFFNX AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHJVU AHZHX AIALX AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AOUOD ASPBG AVWKF AXJTR AZFZN BBWZM BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F0J FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q G8K GBLVA GBOLZ HLZ HMV HVGLF HX~ HZ~ IHE J1W JJJVA KOM LG9 LY7 M24 M38 M41 MAGPM MO0 N9A NDZJH O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ SBC SDF SDG SDP SES SET SEW SMS SPC SPCBC SPD SPG SSM SSQ SST SSV SSZ T5K UHS WUQ XFK ZMT ~G- AAPBV ABPIF ABPTK IQODW AAXKI AAYXX AFJKZ AKRWK CITATION 7SP 7U5 8FD L7M |
ID | FETCH-LOGICAL-c367t-a3cae14c67508b0401a60e41a7e0e4a06b688901cfd2cc21118c085992ee75e63 |
IEDL.DBID | .~1 |
ISSN | 0167-9317 |
IngestDate | Fri Aug 16 23:56:19 EDT 2024 Thu Sep 26 16:01:58 EDT 2024 Sun Oct 22 16:08:51 EDT 2023 Fri Feb 23 02:28:19 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 3 |
Keywords | Deuterium Silicon oxide CMOS devices Reliability Hot-carrier effects Interface trap Pressure dependence Voltage threshold Interface state Annealing Hot carrier Trap MOS transistor MOS circuit Transconductance Electrical characteristic |
Language | English |
License | CC BY 4.0 |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c367t-a3cae14c67508b0401a60e41a7e0e4a06b688901cfd2cc21118c085992ee75e63 |
Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 26705922 |
PQPubID | 23500 |
PageCount | 6 |
ParticipantIDs | proquest_miscellaneous_26705922 crossref_primary_10_1016_S0167_9317_01_00572_X pascalfrancis_primary_1125300 elsevier_sciencedirect_doi_10_1016_S0167_9317_01_00572_X |
PublicationCentury | 2000 |
PublicationDate | 2001-08-01 |
PublicationDateYYYYMMDD | 2001-08-01 |
PublicationDate_xml | – month: 08 year: 2001 text: 2001-08-01 day: 01 |
PublicationDecade | 2000 |
PublicationPlace | Amsterdam |
PublicationPlace_xml | – name: Amsterdam |
PublicationTitle | Microelectronic engineering |
PublicationYear | 2001 |
Publisher | Elsevier B.V Elsevier Science |
Publisher_xml | – name: Elsevier B.V – name: Elsevier Science |
References | Kizilyalli, Lyding, Hess (BIB3) 1997; 18 Hess, Kizilyalli, Lyding (BIB4) 1998; 45 (BIB8) 1980 Takeda, Yang, Miura-Hamada (BIB1) 1995 Lyding, Hess, Kizilyalli (BIB2) 1996; 68 Ference, Burnham, Clark, Hook, Mittl, Watson, Han (BIB5) 1999; 46 Lee, Cheng, Chen, Hess, Lyding, Kim, Lee, Lee, Suh (BIB6) 2000; 21 Heremans, Witters, Groeseneken, Maes (BIB7) 1989; 36 Kizilyalli (10.1016/S0167-9317(01)00572-X_BIB3) 1997; 18 Heremans (10.1016/S0167-9317(01)00572-X_BIB7) 1989; 36 Ference (10.1016/S0167-9317(01)00572-X_BIB5) 1999; 46 (10.1016/S0167-9317(01)00572-X_BIB8) 1980 Takeda (10.1016/S0167-9317(01)00572-X_BIB1) 1995 Lyding (10.1016/S0167-9317(01)00572-X_BIB2) 1996; 68 Hess (10.1016/S0167-9317(01)00572-X_BIB4) 1998; 45 Lee (10.1016/S0167-9317(01)00572-X_BIB6) 2000; 21 |
References_xml | – volume: 21 start-page: 221 year: 2000 ident: BIB6 publication-title: IEEE Elec. Dev. Lett. contributor: fullname: Suh – start-page: 1 year: 1995 ident: BIB1 publication-title: Hot-carrier Effects in Mos Devices contributor: fullname: Miura-Hamada – volume: 68 start-page: 2526 year: 1996 ident: BIB2 publication-title: Appl. Phys. Lett. contributor: fullname: Kizilyalli – volume: 46 start-page: 747 year: 1999 ident: BIB5 publication-title: IEEE Trans. Electron Dev. contributor: fullname: Han – year: 1980 ident: BIB8 publication-title: Proceedings of the International Topical Conference On the Physics of SiO – volume: 18 start-page: 81 year: 1997 ident: BIB3 publication-title: IEEE Electron Dev. Lett. contributor: fullname: Hess – volume: 36 start-page: 1318 year: 1989 ident: BIB7 publication-title: IEEE Trans. Electron Dev. contributor: fullname: Maes – volume: 45 start-page: 406 year: 1998 ident: BIB4 publication-title: IEEE Trans. Electron Dev. contributor: fullname: Lyding – year: 1980 ident: 10.1016/S0167-9317(01)00572-X_BIB8 – start-page: 1 year: 1995 ident: 10.1016/S0167-9317(01)00572-X_BIB1 contributor: fullname: Takeda – volume: 45 start-page: 406 year: 1998 ident: 10.1016/S0167-9317(01)00572-X_BIB4 publication-title: IEEE Trans. Electron Dev. doi: 10.1109/16.658674 contributor: fullname: Hess – volume: 18 start-page: 81 year: 1997 ident: 10.1016/S0167-9317(01)00572-X_BIB3 publication-title: IEEE Electron Dev. Lett. doi: 10.1109/55.556087 contributor: fullname: Kizilyalli – volume: 21 start-page: 221 year: 2000 ident: 10.1016/S0167-9317(01)00572-X_BIB6 publication-title: IEEE Elec. Dev. Lett. doi: 10.1109/55.841302 contributor: fullname: Lee – volume: 68 start-page: 2526 year: 1996 ident: 10.1016/S0167-9317(01)00572-X_BIB2 publication-title: Appl. Phys. Lett. doi: 10.1063/1.116172 contributor: fullname: Lyding – volume: 46 start-page: 747 year: 1999 ident: 10.1016/S0167-9317(01)00572-X_BIB5 publication-title: IEEE Trans. Electron Dev. doi: 10.1109/16.753709 contributor: fullname: Ference – volume: 36 start-page: 1318 year: 1989 ident: 10.1016/S0167-9317(01)00572-X_BIB7 publication-title: IEEE Trans. Electron Dev. doi: 10.1109/16.30938 contributor: fullname: Heremans |
SSID | ssj0016408 |
Score | 1.6620077 |
Snippet | Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a... |
SourceID | proquest crossref pascalfrancis elsevier |
SourceType | Aggregation Database Index Database Publisher |
StartPage | 353 |
SubjectTerms | Applied sciences CMOS devices Design. Technologies. Operation analysis. Testing Deuterium Electronics Exact sciences and technology Hot-carrier effects Integrated circuits Interface trap Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon oxide Transistors |
Title | Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices |
URI | https://dx.doi.org/10.1016/S0167-9317(01)00572-X https://search.proquest.com/docview/26705922 |
Volume | 56 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3NS8MwFA9DL4qInzh1MwcPeojrR5K2R5mOqWwe5qAHIaRZigXtxtwOXvzbfUlbtyEieGkh5IuX5OU98t7vh9C55yWcKR4R88JLKGM-kQFLiCFbjUZhlDBqspF7fd4d0vuYxTXUrnJhTFhlqfsLnW61dVnSKqXZmmRZa2AC6CPf4ImbjEovNhnscBnBnr76_A7zAG_AstJZfG9Te5HFU_RgCy8c99J2QuLf7qetiXwHqaUF3cUPzW2vo84O2i7tSHxdTHUX1XS-hzaX0AX30fONNnwN2fwN22jX-VTjivNWaTxOsVpFa8YyH-GX8YwoOTVEdniqX7MCx_vDVG_3HgfQg9UtB2jYuX1qd0lJpkCUz4MZkb6S2qUKHAQnTODoupI7mroy0PCTDk94GIJxoNKRpxS4hW6oDPhZ5GkdMM39Q7SWj3N9hHAqA09yn9KUcioVk2EKfhiHT8AYT2kdXVUiFJMCM0MsBZPxQBiZC8cVVuYirqOwErRYWXwBev2vpo2VhVkMCJab7zh1dFYtlICDY15DZK7H83cBswXT0vOO_z_4CdooQtJMPOApWptN57oBNsosadpN2ETr13cP3f4XbHng1g |
link.rule.ids | 315,786,790,4521,24144,27957,27958,45620,45714 |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LSwMxEB5qPaiI-MT6ag4e9BC7jyS7eyxVabWthyrsQQjZNIsF3ZY-Dv57k-yuWkQEL7sQNpMws5lMyMz3AZx7XsKoZBE2N7yYUOpjEdAEG7LVaBhGCSWmGrnXZ-0nchfTuAKtshbGpFUWvj_36dZbFy2NQpuNyWjUGJgE-sg3eOKmotKLV2CV0MAlVVhtdu7b_c_LBEYsMZ2F-DYdvgp5ciG28cJxL60cHP-2RW1OxEwrLs0ZL344b7sj3W7DVhFKomY-2x2oqGwXNr4BDO7B87UylA2jxRuyCa-LqUIl7a1UaJwiuQzYjEQ2RC_jOZZiarjs0FS9jnIo73fzeav3MNASrHvZh6fbm8dWGxd8Clj6LJhj4UuhXCL1GcEJE716XcEcRVwRKP0SDktYGOr4QKZDT0p9MnRDafDPIk-pgCrmH0A1G2fqEFAqAk8wn5CUMCIkFWGqj2JMPwJKWUpqcFWqkE9y2Az-LZ-MBdzonDsutzrncQ3CUtF8yf5cu_a_up4uGeZrQB28-Y5Tg3ppKK7XjrkQEZkaL2Zcz1ZHl5539P_B67DWfux1ebfTvz-G9TxDzaQHnkB1Pl2oUx2yzJOz4pf8AEE_44w |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Deuterium+pressure+dependence+of+characteristics+and+hot-carrier+reliability+of+CMOS+devices&rft.jtitle=Microelectronic+engineering&rft.au=KANGGUO+CHENG&rft.au=JINJU+LEE&rft.au=ZHI+CHEN&rft.au=SHAH%2C+Samir&rft.date=2001-08-01&rft.pub=Elsevier+Science&rft.issn=0167-9317&rft.eissn=1873-5568&rft.volume=56&rft.issue=3-4&rft.spage=353&rft.epage=358&rft_id=info:doi/10.1016%2FS0167-9317%2801%2900572-X&rft.externalDBID=n%2Fa&rft.externalDocID=1125300 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0167-9317&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0167-9317&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0167-9317&client=summon |