Intrinsic Conductance of Ferroelectric Charged Domain Walls

• Published in: Physics (Online) Vol. 6; no. 3; pp. 1083 - 1097
• Main Author: Yang, Feng
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.09.2024
• Subjects: Approximation; Carrier density; Carrier mobility; charged domain wall; Compressive properties; conductance; Current carriers; Domain walls; Electric fields; Electrons; Ferroelectric materials; Ferroelectricity; ferroelectrics; First principles; Periodic structures; Point defects; Relaxation time; Semiconductors; Thin films; Transport theory

Ferroelectric charged domain walls offer a revolutionary path for next-generation ferroelectric devices due to their exceptional conductivity within an otherwise insulating matrix. However, quantitative understanding of this “giant conductivity” has remained elusive due to the lack of robust models...