900-mW high brightness buried ridge lasers by selective area epitaxy

A study has been made of high power single lateral mode buried ridge lasers fabricated by selective area epitaxy. Several ridge thicknesses have been evaluated simultaneously in a single fabrication run. These lasers operate purely in the fundamental mode to output powers in excess of 450 mW, after...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 14; no. 4; pp. 441 - 443
Main Authors Swint, R.B., Huber, A.E., Yeoh, T.S., Woo, C.Y., Coleman, J.J., Faircloth, B.O., Zediker, M.S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Beam steering
Biomedical optical imaging
Brightness
Epitaxial growth
Epitaxy
Lab-on-a-chip
Laser modes
Lasers
Lobes
Optical design
Optical pumping
Photonics
Power lasers
Quantum well lasers
Ridges
Semiconductor lasers
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Summary:A study has been made of high power single lateral mode buried ridge lasers fabricated by selective area epitaxy. Several ridge thicknesses have been evaluated simultaneously in a single fabrication run. These lasers operate purely in the fundamental mode to output powers in excess of 450 mW, after which they are subject to beam steering or higher order mode operation. For weakly guided lasers, the output remains in a narrow lobe [full-width at half-maximum (FWHM)] = 4/spl deg/-6/spl deg/, stable at a given current value, up to output powers of 900 mW in CW tests.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1041-1135
1941-0174
DOI:10.1109/68.992571