Neutral scatterers dominate carrier transport in CVD graphene with ionic impurities

• Published in: Carbon (New York) Vol. 165; pp. 163 - 168
• Main Authors: Chen, Szu-Hua, Nguyen, Yen, Chen, Ting-Wei, Yen, Zhi-Long, Hofmann, Mario, Hsieh, Ya-Ping
• Format: Journal Article
• Language: English
• Published: New York Elsevier Ltd 15.09.2020; Elsevier BV
• Subjects: Adsorbates; Carrier density; Carrier transport; Charge distribution; Charge transport; Electronic devices; electronic equipment; Etchants; Graphene; Graphite; Heterogeneity; Impurities; Insulators; Raman spectroscopy; Scattering; Semiconductor doping; technology; Two dimensional materials

The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of interaction between ionic adsorbates and carriers i...