Neutral scatterers dominate carrier transport in CVD graphene with ionic impurities
The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of interaction between ionic adsorbates and carriers i...
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| Published in | Carbon (New York) Vol. 165; pp. 163 - 168 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
15.09.2020
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| Abstract | The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of interaction between ionic adsorbates and carriers in 2D materials. We here observe a previously unknown source of carrier scattering in graphene upon interaction with ionic impurities. Different from charged impurity scattering, these “neutral scatterers” do not depend on carrier concentration and yield a sixfold mobility variation at similar doping. Comparison of different ionic residue from various metal etchants reveals a universal mechanism that controls the carrier mean free path. Raman spectroscopy suggests that inhomogeneous charge distribution is the source of neutral scatterers and we extract an optical fingerprint for their presence. The charge heterogeneity thus acts as an additional degree of freedom in graphene’s carrier transport and its consideration can explain the transition from ambipolar to unipolar charge transport in graphene. Our results not only provide new insight into the carrier transport of 2D materials in the presence of disorder and provide guidelines for enhancing the performance of graphene devices but also enable novel device concepts in graphene.
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| AbstractList | The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of interaction between ionic adsorbates and carriers in 2D materials. We here observe a previously unknown source of carrier scattering in graphene upon interaction with ionic impurities. Different from charged impurity scattering, these “neutral scatterers” do not depend on carrier concentration and yield a sixfold mobility variation at similar doping. Comparison of different ionic residue from various metal etchants reveals a universal mechanism that controls the carrier mean free path. Raman spectroscopy suggests that inhomogeneous charge distribution is the source of neutral scatterers and we extract an optical fingerprint for their presence. The charge heterogeneity thus acts as an additional degree of freedom in graphene’s carrier transport and its consideration can explain the transition from ambipolar to unipolar charge transport in graphene. Our results not only provide new insight into the carrier transport of 2D materials in the presence of disorder and provide guidelines for enhancing the performance of graphene devices but also enable novel device concepts in graphene.
[Display omitted] The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of interaction between ionic adsorbates and carriers in 2D materials. We here observe a previously unknown source of carrier scattering in graphene upon interaction with ionic impurities. Different from charged impurity scattering, these "neutral scatterers" do not depend on carrier concentration and yield a sixfold mobility variation at similar doping. Comparison of different ionic residue from various metal etchants reveals a universal mechanism that controls the carrier mean free path. Raman spectroscopy suggests that inhomogeneous charge distribution is the source of neutral scatterers and we extract an optical fingerprint for their presence. The charge heterogeneity thus acts as an additional degree of freedom in graphene's carrier transport and its consideration can explain the transition from ambipolar to unipolar charge transport in graphene. Our results not only provide new insight into the carrier transport of 2D materials in the presence of disorder and provide guidelines for enhancing the performance of graphene devices but also enable novel device concepts in graphene. |
| Author | Hofmann, Mario Chen, Ting-Wei Chen, Szu-Hua Hsieh, Ya-Ping Yen, Zhi-Long Nguyen, Yen |
| Author_xml | – sequence: 1 givenname: Szu-Hua surname: Chen fullname: Chen, Szu-Hua organization: Department of Physics, National Taiwan University, Taipei, 10617, Taiwan – sequence: 2 givenname: Yen surname: Nguyen fullname: Nguyen, Yen organization: Department of Physics, National Taiwan University, Taipei, 10617, Taiwan – sequence: 3 givenname: Ting-Wei surname: Chen fullname: Chen, Ting-Wei organization: Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chiayi, 62102, Taiwan – sequence: 4 givenname: Zhi-Long surname: Yen fullname: Yen, Zhi-Long organization: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan – sequence: 5 givenname: Mario surname: Hofmann fullname: Hofmann, Mario email: mario@phys.ntu.edu.tw organization: Department of Physics, National Taiwan University, Taipei, 10617, Taiwan – sequence: 6 givenname: Ya-Ping surname: Hsieh fullname: Hsieh, Ya-Ping email: yphsieh@gate.sinica.edu.tw organization: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan |
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| CitedBy_id | crossref_primary_10_3390_nano13091494 crossref_primary_10_1007_s12274_022_4130_z crossref_primary_10_1021_acsaelm_4c02119 crossref_primary_10_1002_adfm_202004370 crossref_primary_10_1021_acsnano_1c03549 crossref_primary_10_1002_smtd_202400955 |
| Cites_doi | 10.1109/LED.2009.2016443 10.1007/s12274-012-0227-0 10.1038/nnano.2010.132 10.1038/nnano.2009.177 10.1038/srep17393 10.1021/nl201432g 10.1021/acs.nanolett.5b00440 10.1021/acs.jpclett.9b00862 10.1103/PhysRevLett.98.186806 10.1021/nl903272n 10.1038/ncomms2022 10.7567/JJAP.50.070108 10.1021/nl904286r 10.1039/C6RA27436F 10.1039/C4NR04956J 10.1039/C3NR05230C 10.1063/1.5009253 10.1021/acs.nanolett.9b02178 10.1002/smll.201100318 10.1021/acsnano.5b01261 10.1021/acs.chemmater.5b04007 10.1038/srep21676 10.1038/nmat1967 10.1021/acsnano.6b08278 10.1038/s41598-017-09465-x 10.1038/srep15061 10.1063/1.4983310 |
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| Snippet | The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in... |
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| StartPage | 163 |
| SubjectTerms | Adsorbates Carrier density Carrier transport Charge distribution Charge transport Electronic devices electronic equipment Etchants Graphene Graphite Heterogeneity Impurities Insulators Raman spectroscopy Scattering Semiconductor doping technology Two dimensional materials |
| Title | Neutral scatterers dominate carrier transport in CVD graphene with ionic impurities |
| URI | https://dx.doi.org/10.1016/j.carbon.2020.04.036 https://www.proquest.com/docview/2440488200 https://www.proquest.com/docview/2439420020 |
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