Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer

• Published in: Superlattices and microstructures Vol. 147; p. 106682
• Main Authors: Rasool, Asif, Amiruddin, R., Mohamed, I. Raja, Kumar, M.C. Santhosh
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2020
• Subjects: MoO3; Oxygen vacancy defects; Resistive switching (RS); Oxygen vacancy defects; Resistive switching (RS); MoO3

The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical prop...