Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer

• Published in: Superlattices and microstructures Vol. 147; p. 106682
• Main Authors: Rasool, Asif, Amiruddin, R., Mohamed, I. Raja, Kumar, M.C. Santhosh
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2020
• Subjects: MoO3; Oxygen vacancy defects; Resistive switching (RS); Oxygen vacancy defects; Resistive switching (RS); MoO3
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2020.106682

The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated. X-ray photoelectron spectroscopy (XPS) analysis elucidates that the thickness of the MoO3 thin films has a strong dependence on controlling the ratio of oxygen vacancy (VO) defects. Using MoO3 as an intermediate layer, the resistive switching characteristics of the ITO/MoO3/Ag devices were tested for 25 cycles. With an optimum thickness (~614 nm) of the MoO3 switching layer, the device exhibits a large resistive switching loop area and a higher ON/OFF ratio value of 1.28. The role of thickness-controlled oxygen vacancy (VO) defects in MoO3 towards the formation/rupture of conductive filaments in the fabricated RS memory device were explored. •Thickness effect of MoO3 thin films on structural, morphological optical properties and resistive switching behavior was studied.•The underlying physical mechanisms responsible for RS behavior of ITO/MoO3/Ag was studied.•Oxygen Vacancy defects and charge trapping/detapping plays important role in resistive switching characteristics.•The fabricated RS devices fallows Ohmic behavior at low voltage region and SCLC conduction at higher voltage.