Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer - Rasool, Asif; Amiruddin, R.; Mohamed, I. Raja; Kumar, M.C. Santhosh (Superlattices and microstructures, 2020)
Keywords: MoO3; Oxygen vacancy defects; Resistive switching (RS); Oxygen vacancy defects; Resistive switching (RS); MoO3