Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer

The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical prop...

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Published inSuperlattices and microstructures Vol. 147; p. 106682
Main Authors Rasool, Asif, Amiruddin, R., Mohamed, I. Raja, Kumar, M.C. Santhosh
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.2020
Subjects
MoO3
Oxygen vacancy defects
Resistive switching (RS)
Oxygen vacancy defects
Resistive switching (RS)
MoO3
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Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated. X-ray photoelectron spectroscopy (XPS) analysis elucidates that the thickness of the MoO3 thin films has a strong dependence on controlling the ratio of oxygen vacancy (VO) defects. Using MoO3 as an intermediate layer, the resistive switching characteristics of the ITO/MoO3/Ag devices were tested for 25 cycles. With an optimum thickness (~614 nm) of the MoO3 switching layer, the device exhibits a large resistive switching loop area and a higher ON/OFF ratio value of 1.28. The role of thickness-controlled oxygen vacancy (VO) defects in MoO3 towards the formation/rupture of conductive filaments in the fabricated RS memory device were explored. •Thickness effect of MoO3 thin films on structural, morphological optical properties and resistive switching behavior was studied.•The underlying physical mechanisms responsible for RS behavior of ITO/MoO3/Ag was studied.•Oxygen Vacancy defects and charge trapping/detapping plays important role in resistive switching characteristics.•The fabricated RS devices fallows Ohmic behavior at low voltage region and SCLC conduction at higher voltage.
AbstractList The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated. X-ray photoelectron spectroscopy (XPS) analysis elucidates that the thickness of the MoO3 thin films has a strong dependence on controlling the ratio of oxygen vacancy (VO) defects. Using MoO3 as an intermediate layer, the resistive switching characteristics of the ITO/MoO3/Ag devices were tested for 25 cycles. With an optimum thickness (~614 nm) of the MoO3 switching layer, the device exhibits a large resistive switching loop area and a higher ON/OFF ratio value of 1.28. The role of thickness-controlled oxygen vacancy (VO) defects in MoO3 towards the formation/rupture of conductive filaments in the fabricated RS memory device were explored. •Thickness effect of MoO3 thin films on structural, morphological optical properties and resistive switching behavior was studied.•The underlying physical mechanisms responsible for RS behavior of ITO/MoO3/Ag was studied.•Oxygen Vacancy defects and charge trapping/detapping plays important role in resistive switching characteristics.•The fabricated RS devices fallows Ohmic behavior at low voltage region and SCLC conduction at higher voltage.
ArticleNumber 106682
Author Rasool, Asif
Amiruddin, R.
Kumar, M.C. Santhosh
Mohamed, I. Raja
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  givenname: Asif
  surname: Rasool
  fullname: Rasool, Asif
  organization: Department of Physics, B.S. Abdur Rahman Crescent Institute of Science and Technology, Chennai, 600048, India
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  givenname: R.
  surname: Amiruddin
  fullname: Amiruddin, R.
  email: amir@crescent.education
  organization: Department of Physics, B.S. Abdur Rahman Crescent Institute of Science and Technology, Chennai, 600048, India
– sequence: 3
  givenname: I. Raja
  surname: Mohamed
  fullname: Mohamed, I. Raja
  organization: Department of Physics, B.S. Abdur Rahman Crescent Institute of Science and Technology, Chennai, 600048, India
– sequence: 4
  givenname: M.C. Santhosh
  surname: Kumar
  fullname: Kumar, M.C. Santhosh
  organization: Optoelectronic Materials and Devices Lab, Department of Physics, National Institute of Technology, Tiruchirappalli, 620 015, India
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Snippet The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique,...
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elsevier
SourceType Enrichment Source
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Publisher
StartPage 106682
SubjectTerms MoO3
Oxygen vacancy defects
Resistive switching (RS)
Title Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer
URI https://dx.doi.org/10.1016/j.spmi.2020.106682
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