APA (7th ed.) Citation

Rasool, A., Amiruddin, R., Mohamed, I. R., & Kumar, M. S. (2020). Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer. Superlattices and microstructures, 147, 106682. https://doi.org/10.1016/j.spmi.2020.106682

Chicago Style (17th ed.) Citation

Rasool, Asif, R. Amiruddin, I. Raja Mohamed, and M.C. Santhosh Kumar. "Fabrication and Characterization of Resistive Random Access Memory (ReRAM) Devices Using Molybdenum Trioxide (MoO3) as Switching Layer." Superlattices and Microstructures 147 (2020): 106682. https://doi.org/10.1016/j.spmi.2020.106682.

MLA (9th ed.) Citation

Rasool, Asif, et al. "Fabrication and Characterization of Resistive Random Access Memory (ReRAM) Devices Using Molybdenum Trioxide (MoO3) as Switching Layer." Superlattices and Microstructures, vol. 147, 2020, p. 106682, https://doi.org/10.1016/j.spmi.2020.106682.