Muonium transitions in Ge-rich SiGe alloys

• Published in: Physica. B, Condensed matter Vol. 407; no. 15; pp. 2829 - 2832
• Main Authors: Mengyan, P.W., Lichti, R.L., Celebi, Y.G., Carroll, B.R., Baker, B.B., Bani-Salameh, H.N., Yonenaga, I.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Kidlington Elsevier B.V 01.08.2012; Elsevier
• Subjects: Alloys; Condensed matter; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Hydrogen; Magnetic properties; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Muon spin rotation and relaxation; Muonium; Muons; Particle spin; Physics; SiGe Alloy; Silicon germanides; Trends; SiGe Alloy; Muonium; Hydrogen; Muon spin relaxation; Silicon Germanides; Valence; Acceptor center; Ge-Si alloys; Hydrogen additions; Chemical composition; Donor center; Defects
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2011.08.027

We discuss charge-state and site-change transitions of muonium (Mu) in bulk Czochralski-grown Si1−xGex alloys studied via longitudinal field muon spin relaxation (LF-μSR). A useful application of the muon spin research technique utilizes the similarities of neutral muonium (Mu0=μ+e−) to the hydrogen atom to provide an experimentally accessible analog to hydrogen. This contribution focuses primarily on three Ge-rich samples (x=0.94, 0.91 and 0.81) as well as a general discussion of the compositional trends of Mu chemical states and associated transition dynamics. These LF-μSR results, in conjunction with prior muon spin research studies, allow an extensive description of Mu defect chemistry in Si1−xGex as part of a larger project that has focused on the compositional trends in Mu hyperfine frequencies as well as the acceptor and donor energies.