Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging
Etching of a patterned semiconductor surface in a plasma depends strongly on the transport of ion and neutral species between the features. Factors altering ion scattering at the sidewalls of high aspect ratio features, such as ion temperature, mask erosion, and charging, influence significantly the...
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Published in | Thin solid films Vol. 374; no. 2; pp. 175 - 180 |
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Main Authors | , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Lausanne
Elsevier B.V
17.10.2000
Elsevier Science |
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Abstract | Etching of a patterned semiconductor surface in a plasma depends strongly on the transport of ion and neutral species between the features. Factors altering ion scattering at the sidewalls of high aspect ratio features, such as ion temperature, mask erosion, and charging, influence significantly the final profile shape. Models to describe the inelastic and reactive scattering at various surfaces, coupled to ion trajectory calculations in the sheath and between features, are used to illustrate the contribution of these factors to microtrenching and sidewall bowing. A transition in the profile shape from exhibiting microtrenching to having a rounded bottom is predicted as a result of plasma-induced charging in very high aspect ratio insulating masks. |
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AbstractList | Etching of a patterned semiconductor surface in a plasma depends strongly on the transport of ion and neutral species between the features. Factors altering ion scattering at the sidewalls of high aspect ratio features, such as ion temperature, mask erosion, and charging, influence significantly the final profile shape. Models to describe the inelastic and reactive scattering at various surfaces, coupled to ion trajectory calculations in the sheath and between features, are used to illustrate the contribution of these factors to microtrenching and sidewall bowing. A transition in the profile shape from exhibiting microtrenching to having a rounded bottom is predicted as a result of plasma-induced charging in very high aspect ratio insulating masks. |
Author | Hwang, G.S Giapis, K.P |
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Cites_doi | 10.1116/1.580692 10.1116/1.576538 10.1116/1.590135 10.1116/1.581942 10.1116/1.581530 10.1088/0963-0252/5/2/002 10.1016/0039-6028(93)90645-Z 10.1116/1.589258 10.1103/PhysRevLett.77.3049 |
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Keywords | Sidewall bowing Semiconductor Plasma etching Microtrenching Patterning Semiconductor materials Trench technology Charge states Theoretical study Surface treatments Aspect ratio Faceting Microelectronic fabrication Inelastic scattering Ion scattering Morphology Masking Modelling Wall effects Surface plasma interaction |
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SubjectTerms | Applied sciences Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Microelectronic fabrication (materials and surfaces technology) Microtrenching Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma etching Semiconductor Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sidewall bowing Surface cleaning, etching, patterning Surface treatments |
Title | Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging |
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