Dependence of electronic properties of germanium on the in-plane biaxial tensile strains

• Published in: Physica. B, Condensed matter Vol. 427; pp. 62 - 67
• Main Authors: Yang, C.H., Yu, Z.Y., Liu, Y.M., Lu, P.F., Gao, T., Li, M., Manzoor, S.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 15.10.2013; Elsevier
• Subjects: Ab initio; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Elasticity, elastic constants; Electron density of states and band structure of crystalline solids; Electron states; Electronic properties; Elemental semiconductors; Exact sciences and technology; Germanium; Hybrid functional; In-plane biaxial strain; Mathematical analysis; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Physics; Semiconductors; Spin-orbit interactions; Splitting; Strain; Tensile-strained Ge; Valence band; Electronic properties; Ab initio; Hybrid functional; Tensile-strained Ge; In-plane biaxial strain; Band structure; Elastic constants; Semiconductor materials; Biaxial strain; Displacement(deformation); APW calculations; Energy gap; Tensile stress; Plane strain; Spin-orbit interactions; Germanium; Ab initio calculations; Energy-level splitting; Least square fit

The hybrid HSE06 functional with the spin–orbit coupling effects is used to calculate the habituation of the electronic properties of Ge on the (001), (111), (101) in-plane biaxial tensile strains (IPBTSs). Our motivation is to explore the nature of electronic properties of tensile-strained Ge on di...