Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices
Channel temperature T ch of GaAs MESFETs, determined by means of electrical measurements ( ΔV gs), has been compared and correlated with thermal maps obtained by high resolution infrared microscopy. Results show that in low power devices with a small number of gates, the value of T ch derived from Δ...
Saved in:
| Published in | Microelectronics and reliability Vol. 29; no. 2; pp. 117 - 124 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Oxford
Elsevier Ltd
1989
Elsevier |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Channel temperature
T
ch of GaAs MESFETs, determined by means of electrical measurements (
ΔV
gs), has been compared and correlated with thermal maps obtained by high resolution infrared microscopy. Results show that in low power devices with a small number of gates, the value of
T
ch derived from
ΔV
gs measurements is close to the maximum values of temperature measured on the hottest junctions on the chip. Local thermal inhomogeneities, in particular those observed in devices characterized by high values of
R
th, can explain and confirm results of failure analyses of MESFETs submitted to accelerated life tests in operating conditions where degradation phenomena occur in localized areas of the device. |
|---|---|
| AbstractList | Channel temperature T sub(ch) of GaAs MESFETs, determined by means of electrical measurements ( Delta V sub(gs)), has been compared and correlated with thermal maps obtained by high resolution infrared microscopy. Results show that in low power devices with a small number of gates, the value of T sub(ch) derived from Delta V sub(gs) measurements is close to the maximum values of temperature measured on the hottest junctions on the chip. Local thermal inhomogeneities, in particular those observed in devices characterized by high values of R sub(th), can explain and confirm results of failure analyses of MESFETs submitted to accelerated life tests in operating conditions where degradation phenomena occur in localized areas of the device. Channel temperature T ch of GaAs MESFETs, determined by means of electrical measurements ( ΔV gs), has been compared and correlated with thermal maps obtained by high resolution infrared microscopy. Results show that in low power devices with a small number of gates, the value of T ch derived from ΔV gs measurements is close to the maximum values of temperature measured on the hottest junctions on the chip. Local thermal inhomogeneities, in particular those observed in devices characterized by high values of R th, can explain and confirm results of failure analyses of MESFETs submitted to accelerated life tests in operating conditions where degradation phenomena occur in localized areas of the device. |
| Author | Donzelli, G. Magistrali, F. Chiussi, F. Canali, C. Zanoni, E. |
| Author_xml | – sequence: 1 givenname: C. surname: Canali fullname: Canali, C. organization: Dipartimento di Elettronica ed Informatica, Universita' di Padova, Via Gradenigo 6/A, 35131 Padova, Italy – sequence: 2 givenname: F. surname: Chiussi fullname: Chiussi, F. – sequence: 3 givenname: G. surname: Donzelli fullname: Donzelli, G. – sequence: 4 givenname: F. surname: Magistrali fullname: Magistrali, F. – sequence: 5 givenname: E. surname: Zanoni fullname: Zanoni, E. organization: Dipartimento di Elettrotecnica ed Elettronica, Universita' di Bari, Via Re David 200, 70125 Bari, Italy |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19489637$$DView record in Pascal Francis |
| BookMark | eNp9kEFrFDEUx4NU6Lb1G_SQi6Lg6MtsJpO5CGWptlDxoEJvIZO8oZFMMibZLv0Afm-z3VJvXhLy8vu_x_udkKMQAxJyzuADAyY-ArSiaXvG38rh3QBdJxr5gqyY7Ntm4Oz2iKyekWNykvMvAOiBsRX5s4kpodfFxUBHLDvEQMsdpll7mjC7XHQw-J6aOx0CelpwXjDpsk216MKUdEL7nJj1kqkOlk7a-YrQGfdBl-dcYerjji5xh4l-vfz--fIHtXjvDOYz8nLSPuOrp_uU_Ky_m6vm5tuX683FTWPWoisNjr3s2m7ko-AGzBp113IpYbIjtwYsHy0OIIceUEshWM8BrOlNfU9ouV6fkjeHvkuKv7eYi5pdNui9Dhi3WbUdE6IeFeQH0KSYc8JJLcnNOj0oBmrvXO2Fqr1QJQf16FzJGnv91F9no32VE4zL_7IDl4NY95X7dOCwLnvvMKlsHFbP1iU0Rdno_j_oL6V7mfU |
| CODEN | MCRLAS |
| CitedBy_id | crossref_primary_10_1063_1_120987 crossref_primary_10_1557_PROC_516_45 crossref_primary_10_1016_S0026_2714_98_00095_X crossref_primary_10_3166_qirt_1_151_172 crossref_primary_10_1063_1_1896620 crossref_primary_10_1007_BF02995712 crossref_primary_10_1002_qre_4680060108 crossref_primary_10_1016_0026_2714_90_90559_6 crossref_primary_10_1016_0026_2714_89_90333_8 |
| Cites_doi | 10.1049/el:19870060 10.1109/EDL.1986.26338 10.1002/j.1538-7305.1979.tb02244.x |
| ContentType | Journal Article |
| Copyright | 1989 1991 INIST-CNRS |
| Copyright_xml | – notice: 1989 – notice: 1991 INIST-CNRS |
| DBID | IQODW AAYXX CITATION 7SP 8FD L7M |
| DOI | 10.1016/0026-2714(89)90556-8 |
| DatabaseName | Pascal-Francis CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Technology Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Applied Sciences |
| EISSN | 1872-941X |
| EndPage | 124 |
| ExternalDocumentID | 10_1016_0026_2714_89_90556_8 19489637 0026271489905568 |
| GroupedDBID | --K --M .DC .~1 0R~ 123 1B1 1~. 1~5 29M 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO AAYFN ABBOA ABFNM ABFRF ABJNI ABMAC ABXDB ABXRA ABYKQ ACDAQ ACGFS ACNNM ACRLP ACZNC ADBBV ADEZE ADJOM ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHJVU AHZHX AIALX AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AOUOD AXJTR AZFZN BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q GBLVA GBOLZ HVGLF HZ~ IHE J1W JJJVA KOM LY7 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ RXW SDF SDG SES SET SEW SPC SPCBC SPD SSM SST SSV SSZ T5K T9H TAE UHS UNMZH WUQ XOL ZMT ~G- 08R AALMO AAPBV ABFLS ABPIF ABPTK ABQIS ADALY IPNFZ IQODW AAXKI AAYXX AFJKZ AKRWK CITATION 7SP 8FD L7M |
| ID | FETCH-LOGICAL-c365t-eb78525b4b64c0c3ea524880fdb4dc0d4bde908970ea86617400dc7c70efed4a3 |
| ISSN | 0026-2714 |
| IngestDate | Fri Aug 16 20:50:55 EDT 2024 Thu Sep 26 19:30:50 EDT 2024 Fri Nov 25 01:03:59 EST 2022 Fri Feb 23 02:33:05 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 2 |
| Keywords | Metal semiconductor field effect transistor |
| Language | English |
| License | CC BY 4.0 |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c365t-eb78525b4b64c0c3ea524880fdb4dc0d4bde908970ea86617400dc7c70efed4a3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 25166251 |
| PQPubID | 23500 |
| PageCount | 8 |
| ParticipantIDs | proquest_miscellaneous_25166251 crossref_primary_10_1016_0026_2714_89_90556_8 pascalfrancis_primary_19489637 elsevier_sciencedirect_doi_10_1016_0026_2714_89_90556_8 |
| PublicationCentury | 1900 |
| PublicationDate | 1989 1989-1-00 19890101 |
| PublicationDateYYYYMMDD | 1989-01-01 |
| PublicationDate_xml | – year: 1989 text: 1989 |
| PublicationDecade | 1980 |
| PublicationPlace | Oxford |
| PublicationPlace_xml | – name: Oxford |
| PublicationTitle | Microelectronics and reliability |
| PublicationYear | 1989 |
| Publisher | Elsevier Ltd Elsevier |
| Publisher_xml | – name: Elsevier Ltd – name: Elsevier |
| References | Walshak, Poole (BIB6) Feb. 1977; 1977 Fukui (BIB7) 1979; 58 Canali, Castaldo, Fantini, Ogliari, Umena, Zanoni (BIB8) 1986; EDL-7 Canali, Chiussi, Umena, Vanzi, Zanoni (BIB10) 1987 (BIB5) 1977 Wemple, Huang (BIB2) 1982 Webb (BIB4) 1983; 130 Webb (BIB3) 1987; 134 Canali, Donzelli, Fantini, Vanzi, Paccagnella (BIB9) 1987; 23 Fukui (BIB1) 1980; 1980 Fukui (10.1016/0026-2714(89)90556-8_BIB7) 1979; 58 Webb (10.1016/0026-2714(89)90556-8_BIB4) 1983; 130 Canali (10.1016/0026-2714(89)90556-8_BIB8) 1986; EDL-7 Wemple (10.1016/0026-2714(89)90556-8_BIB2) 1982 Walshak (10.1016/0026-2714(89)90556-8_BIB6) 1977; 1977 Canali (10.1016/0026-2714(89)90556-8_BIB9) 1987; 23 Webb (10.1016/0026-2714(89)90556-8_BIB3) 1987; 134 Canali (10.1016/0026-2714(89)90556-8_BIB10) 1987 Fukui (10.1016/0026-2714(89)90556-8_BIB1) 1980; 1980 (10.1016/0026-2714(89)90556-8_BIB5) 1977 |
| References_xml | – volume: 58 start-page: 771 year: 1979 end-page: 797 ident: BIB7 article-title: Determination of the basic device parameters of a GaAs MESFET publication-title: Bell Syst. Tech. J. contributor: fullname: Fukui – volume: 1980 start-page: 118 year: 1980 end-page: 121 ident: BIB1 article-title: Thermal resistance of GaAs field-effect transistors publication-title: IEDM Tech. Dig. contributor: fullname: Fukui – volume: 1977 start-page: 23 year: Feb. 1977 end-page: 25 ident: BIB6 article-title: Thermal resistance measurement by IR scanning publication-title: Microwave J. contributor: fullname: Poole – start-page: 309 year: 1982 end-page: 348 ident: BIB2 article-title: Thermal design of power GaAs FET's publication-title: GaAs Principles and Technology contributor: fullname: Huang – start-page: 613 year: 1987 end-page: 616 ident: BIB10 article-title: Effects of high current and temperature in power MESFET metallizations publication-title: Proceedings of ESSDERC '87 contributor: fullname: Zanoni – volume: 134 start-page: 51 year: 1987 end-page: 56 ident: BIB3 article-title: Measurements of thermal resistance using electrical methods publication-title: IEE Proc. contributor: fullname: Webb – volume: 23 start-page: 83 year: 1987 end-page: 84 ident: BIB9 article-title: Gold-based gate-sinking enhanced by inhomogeneities in power MESFET's publication-title: Electron. Lett. contributor: fullname: Paccagnella – volume: EDL-7 start-page: 185 year: 1986 ident: BIB8 article-title: Gate metallization sinking into the active channel in Ti/W/Au metallized power MESFET's publication-title: IEEE Electron. Device Lett. contributor: fullname: Zanoni – year: 1977 ident: BIB5 article-title: Device thermal resistance measurement by IR scanning publication-title: MSC Application note GP-201 – volume: 130 start-page: 153 year: 1983 end-page: 159 ident: BIB4 article-title: Measurements of thermal transients in semiconductor power devices and circuits publication-title: IEE Proc. contributor: fullname: Webb – volume: 23 start-page: 83 issue: 2 year: 1987 ident: 10.1016/0026-2714(89)90556-8_BIB9 article-title: Gold-based gate-sinking enhanced by inhomogeneities in power MESFET's publication-title: Electron. Lett. doi: 10.1049/el:19870060 contributor: fullname: Canali – volume: 134 start-page: 51 year: 1987 ident: 10.1016/0026-2714(89)90556-8_BIB3 article-title: Measurements of thermal resistance using electrical methods contributor: fullname: Webb – start-page: 613 year: 1987 ident: 10.1016/0026-2714(89)90556-8_BIB10 article-title: Effects of high current and temperature in power MESFET metallizations contributor: fullname: Canali – volume: EDL-7 start-page: 185 year: 1986 ident: 10.1016/0026-2714(89)90556-8_BIB8 article-title: Gate metallization sinking into the active channel in Ti/W/Au metallized power MESFET's publication-title: IEEE Electron. Device Lett. doi: 10.1109/EDL.1986.26338 contributor: fullname: Canali – volume: 1977 start-page: 23 year: 1977 ident: 10.1016/0026-2714(89)90556-8_BIB6 article-title: Thermal resistance measurement by IR scanning publication-title: Microwave J. contributor: fullname: Walshak – volume: 58 start-page: 771 year: 1979 ident: 10.1016/0026-2714(89)90556-8_BIB7 article-title: Determination of the basic device parameters of a GaAs MESFET publication-title: Bell Syst. Tech. J. doi: 10.1002/j.1538-7305.1979.tb02244.x contributor: fullname: Fukui – volume: 1980 start-page: 118 year: 1980 ident: 10.1016/0026-2714(89)90556-8_BIB1 article-title: Thermal resistance of GaAs field-effect transistors publication-title: IEDM Tech. Dig. contributor: fullname: Fukui – start-page: 309 year: 1982 ident: 10.1016/0026-2714(89)90556-8_BIB2 article-title: Thermal design of power GaAs FET's contributor: fullname: Wemple – volume: 130 start-page: 153 year: 1983 ident: 10.1016/0026-2714(89)90556-8_BIB4 article-title: Measurements of thermal transients in semiconductor power devices and circuits contributor: fullname: Webb – year: 1977 ident: 10.1016/0026-2714(89)90556-8_BIB5 article-title: Device thermal resistance measurement by IR scanning publication-title: MSC Application note GP-201 |
| SSID | ssj0007011 |
| Score | 1.3924335 |
| Snippet | Channel temperature
T
ch of GaAs MESFETs, determined by means of electrical measurements (
ΔV
gs), has been compared and correlated with thermal maps obtained... Channel temperature T sub(ch) of GaAs MESFETs, determined by means of electrical measurements ( Delta V sub(gs)), has been compared and correlated with thermal... |
| SourceID | proquest crossref pascalfrancis elsevier |
| SourceType | Aggregation Database Index Database Publisher |
| StartPage | 117 |
| SubjectTerms | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| Title | Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices |
| URI | https://dx.doi.org/10.1016/0026-2714(89)90556-8 https://search.proquest.com/docview/25166251 |
| Volume | 29 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bb9MwFLZK9wJCXAaIchl-AAnUeTSpHSePVSm0bC0SrGLiJbITW6q0ptXSCol3_hM_j-PYuZSBBqhS1FhxHPV8Pefzybkg9LwPHFZRXxMgxwmhgdYkZCIiOoKPpIp7RfrYdBaM5_T9GTtrtX40opa2G3mUfPttXsn_SBXGQK4mS_YfJFvdFAbgO8gXjiBhOP6VjIemtYYNZqsCrgyhWxbV-nNDDTPrJDf5vZk675pKVK6MshmGh7goItDLWUuxtkWbtViYgPXuUpmpi3xZxM2er75216avWnc6-vR2dGpyroymaVLcqQnxq7vr2NvBYy5sRfDKhT8czAYnkx1H7XA8mYN23wk4fvNh9mV0Yi-s-oBNB-8mtttzfW0qXGxW7UlzZr-pmf2A-NwmlB4pq4xD7pOIFi11Km3t_COLxqbZql7P5oA6K-7ZzOxLBsL6KqrVgMWH0QtjkhkLSFgbxTIQ4BdbWUUwehENQXfxa2jP5xGjbbQ3OP74-bhiAbzn2W6NbqUybdMLXldjL8PolVv5T7To5lrk8GfVtsvKJcJQsKDTO-iW277ggcXiXdRS2T667bYy2BmKfB_daNS5vIe-N4CKHVCxgxyugXqIHUxxA6aHuARpNcOAFAOqsAMprkEKF2MAKS5Aii1IsQPpfTSHs-GYuP4fJOkHbEOU5CHzmaQyoEkv6SvBfGNvdCppmvRSKlNlXlvznhIh8EwO9ihNeALnWqVU9B-gdrbK1EOERSIirVOutFQw15eSscQ06WKR76dCdRApf_54bcu8xGX8oxFXbMQVh1FciCsOO4iXMoodVbUUNAagXTHzYEek9XIOUR30rJRxDKrevL8TmVpt8xi2IkEAh0dX3eIxum5DIY2n8Alqby626ilw5408cDD9CRLHxS0 |
| link.rule.ids | 315,786,790,4043,27954,27955,27956 |
| linkProvider | Library Specific Holdings |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Correlation+between+thermal+resistance%2C+channel+temperature%2C+infrared+thermal+maps+and+failure+mechanisms+in+low+power+MESFET+devices&rft.jtitle=Microelectronics+and+reliability&rft.au=CANALI%2C+C&rft.au=CHIUSSI%2C+F&rft.au=DONZELLI%2C+G&rft.au=MAGISTRALI%2C+F&rft.date=1989&rft.pub=Elsevier&rft.issn=0026-2714&rft.eissn=1872-941X&rft.volume=29&rft.issue=2&rft.spage=117&rft.epage=124&rft_id=info:doi/10.1016%2F0026-2714%2889%2990556-8&rft.externalDBID=n%2Fa&rft.externalDocID=19489637 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0026-2714&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0026-2714&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0026-2714&client=summon |