HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 38; no. 2
• Main Authors: Materano, Monica, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe
• Format: Journal Article
• Language: English
• Published: 01.03.2020

In the last few years, hafnium oxide (HfO2), zirconium oxide (ZrO2), and their intermixed system (HfxZr1 − xO2) have aroused more and more interest due to their outstanding properties in the frame of semiconductor applications. Different mixtures of these two sister materials, i.e., different Hf:Zr...