Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits

• Published in: IEEE journal of solid-state circuits Vol. 35; no. 9; pp. 1276 - 1284
• Main Authors: Glass, E.C., Jenn-Hwa Huang, Staudinger, J., Shields, M., Martinez, M.J., Hartin, O.L., Valentine, W., Lan, E.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: FETs; Gain; Heterojunction bipolar transistors; Insulation; Linearity; Noise figure; PHEMTs; Power amplifiers; Power generation; Telephone sets

Single-supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of heterojunction bipolar transistor (HBT) and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET device (HIGFET)...