Temperature effects on gated silicon field emission array performance

• Published in: Journal of vacuum science and technology. B, Nanotechnology & microelectronics Vol. 39; no. 2
• Main Authors: Bhattacharya, Ranajoy, Karaulac, Nedeljko, Chern, Winston, Akinwande, Akintunde Ibitayo, Browning, Jim
• Format: Journal Article
• Language: English
• Published: 01.03.2021

Silicon field emitter arrays (Si FEAs) are being explored as an electron source for vacuum channel transistors for high temperature electronics. Arrays of 1000 × 1000 silicon tip based gated field emitters were studied by measuring their electrical characteristics up to 40 V of DC gate bias with a 1...