Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

• Published in: Applied physics letters Vol. 112; no. 6
• Main Authors: Bryan, Isaac, Bryan, Zachary, Washiyama, Shun, Reddy, Pramod, Gaddy, Benjamin, Sarkar, Biplab, Breckenridge, M. Hayden, Guo, Qiang, Bobea, Milena, Tweedie, James, Mita, Seiji, Irving, Douglas, Collazo, Ramon, Sitar, Zlatko
• Format: Journal Article
• Language: English
• Published: 05.02.2018

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest c...