Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest c...
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| Published in | Applied physics letters Vol. 112; no. 6 |
|---|---|
| Main Authors | , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
05.02.2018
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| Online Access | Get full text |
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| Abstract | In order to understand the influence of dislocations on doping and compensation in
Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on
different templates on sapphire and low dislocation density single crystalline AlN. AlGaN
grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for
any doping concentration due to low threading dislocation related compensation and reduced
self-compensation. The onset of self-compensation, i.e., the “knee behavior” in
conductivity, was found to depend only on the chemical potential of silicon, strongly
indicating the cation vacancy complex with Si as the source of self-compensation. However,
the magnitude of self-compensation was found to increase with an increase in dislocation
density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity
over the entire doping range. |
|---|---|
| AbstractList | In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the “knee behavior” in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range. In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the “knee behavior” in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range. |
| Author | Reddy, Pramod Bryan, Zachary Collazo, Ramon Washiyama, Shun Bobea, Milena Mita, Seiji Sarkar, Biplab Breckenridge, M. Hayden Guo, Qiang Tweedie, James Sitar, Zlatko Gaddy, Benjamin Irving, Douglas Bryan, Isaac |
| Author_xml | – sequence: 1 givenname: Isaac surname: Bryan fullname: Bryan, Isaac organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 2 givenname: Zachary surname: Bryan fullname: Bryan, Zachary organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 3 givenname: Shun surname: Washiyama fullname: Washiyama, Shun organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 4 givenname: Pramod surname: Reddy fullname: Reddy, Pramod organization: Adroit Materials, Inc – sequence: 5 givenname: Benjamin surname: Gaddy fullname: Gaddy, Benjamin organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 6 givenname: Biplab surname: Sarkar fullname: Sarkar, Biplab organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 7 givenname: M. Hayden surname: Breckenridge fullname: Breckenridge, M. Hayden organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 8 givenname: Qiang surname: Guo fullname: Guo, Qiang organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 9 givenname: Milena surname: Bobea fullname: Bobea, Milena organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 10 givenname: James surname: Tweedie fullname: Tweedie, James organization: Adroit Materials, Inc – sequence: 11 givenname: Seiji surname: Mita fullname: Mita, Seiji organization: Adroit Materials, Inc – sequence: 12 givenname: Douglas surname: Irving fullname: Irving, Douglas organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 13 givenname: Ramon surname: Collazo fullname: Collazo, Ramon organization: Department of Materials Science and Engineering, North Carolina State University – sequence: 14 givenname: Zlatko surname: Sitar fullname: Sitar, Zlatko organization: 2Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA |
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| Snippet | In order to understand the influence of dislocations on doping and compensation in
Al-rich AlGaN, thin films were grown by metal organic chemical vapor... In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor... |
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| Title | Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD |
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