APA (7th ed.) Citation

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., . . . Sitar, Z. (2018). Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. Applied physics letters, 112(6), . https://doi.org/10.1063/1.5011984

Chicago Style (17th ed.) Citation

Bryan, Isaac, et al. "Doping and Compensation in Al-rich AlGaN Grown on Single Crystal AlN and Sapphire by MOCVD." Applied Physics Letters 112, no. 6 (2018). https://doi.org/10.1063/1.5011984.

MLA (9th ed.) Citation

Bryan, Isaac, et al. "Doping and Compensation in Al-rich AlGaN Grown on Single Crystal AlN and Sapphire by MOCVD." Applied Physics Letters, vol. 112, no. 6, 2018, https://doi.org/10.1063/1.5011984.