Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC

• Published in: Nanotechnology Vol. 35; no. 27; pp. 275704 - 275712
• Main Authors: Zhu, Xiaogang, Shen, Zhanwei, Wang, Z J, Liu, Zhengran, Miao, Yuyang, Yue, Shizhong, Fu, Zhao, Li, Zihao, Zhang, Yuning, Hong, Rongdun, Wu, Shaoxiong, Chen, Xiaping, Cai, Jiafa, Fu, Deyi, Zhang, Feng
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 01.07.2024
• Subjects: AlN/4H-SiC; high k; hysteresis; Radiation damage; roughness; roughness; AlN/4H-SiC; high k; Radiation damage; hysteresis

This article investigates the radiation effects on as-deposited and annealed AlN films on 4H-SiC substrates under gamma-rays. The AlN films are prepared using plasma-enhanced-atomic-layer-deposition on an n-type 4H-SiC substrate. The AlN/4H-SiC MIS structure is subjected to gamma-ray irradiation wit...