Evidence for two distinct defect related luminescence features in monolayer MoS2

• Published in: Applied physics letters Vol. 109; no. 12
• Main Authors: Saigal, Nihit, Ghosh, Sandip
• Format: Journal Article
• Language: English
• Published: 19.09.2016

Apart from the defect related emission peak which lies ∼100 meV below the A exciton/trion peak and is labeled D 1 here, this study shows that there is another distinct feature D 2 lying ∼200 meV below A in the photoluminescence spectrum of the exfoliated monolayer MoS2 on SiO2/Si substrates. The D 2...