The structure and electromigration behaviour of aluminium films deposited by the partially ionized beam technique

High purity aluminium films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron microscopy. The influences of the accelerating voltage and subsequent annealing on the average grain size, grain size distribution, texture and gra...

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Published inThin solid films Vol. 227; no. 1; pp. 54 - 58
Main Authors Fionova, L.K., Kononenko, O.V., Matveev, V.N.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 05.05.1993
Elsevier Science
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Abstract High purity aluminium films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron microscopy. The influences of the accelerating voltage and subsequent annealing on the average grain size, grain size distribution, texture and grain boundary morphology were studied. It was observed that the appearance of a large number of special grain boundaries in the annealed films deposited with an accelerating voltage increased the electromigration interruption lifetimes of the films.
AbstractList High purity aluminium films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron microscopy. The influences of the accelerating voltage and subsequent annealing on the average grain size, grain size distribution, texture and grain boundary morphology were studied. It was observed that the appearance of a large number of special grain boundaries in the annealed films deposited with an accelerating voltage increased the electromigration interruption lifetimes of the films.
High purity aluminium (99.999%) films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron microscopy. The influences of the accelerating voltage and subsequent annealing on the average grain size, grain size distribution, texture and grain boundary morphology were studied. It was observed that the appearance of a large number of special grain boundaries in the annealed films deposited with an accelerating voltage increased the electromigration interruption lifetimes of the films.
Author Matveev, V.N.
Fionova, L.K.
Kononenko, O.V.
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10.1007/BF02648378
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Snippet High purity aluminium films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron...
High purity aluminium (99.999%) films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission...
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Title The structure and electromigration behaviour of aluminium films deposited by the partially ionized beam technique
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