Modeling of program Vth distribution for 3-D TLC NAND flash memory
This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and the RTN effect of tunneling oxide and poly Si, which are...
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| Published in | Science China. Information sciences Vol. 62; no. 4; p. 42401 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Beijing
Science China Press
01.04.2019
Springer Nature B.V |
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| Abstract | This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and the RTN effect of tunneling oxide and poly Si, which are the major physical factors affecting the width of program Vth distribution. Then, the program Vth distribution shapes with different ISPP incremental voltage steps are compared, and the results are found to be consistent with the experimental results. Code and layer-dependent coupling coefficients of WL-WL interference in 3-D vertical channel NAND flash memory are considered. The effect of RTN on the program Vth distribution is comprehensively studied. The program Vth distribution of a WL is calibrated with the measurement, and a good agreement is obtained, validating the array program Vth distribution simulation method. The simulation method can help in improving the reliability of 3-D TLC NAND flash memory and provides guidance for the design and optimization of 3-D QLC NAND flash memory technology. |
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| AbstractList | This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and the RTN effect of tunneling oxide and poly Si, which are the major physical factors affecting the width of program Vth distribution. Then, the program Vth distribution shapes with different ISPP incremental voltage steps are compared, and the results are found to be consistent with the experimental results. Code and layer-dependent coupling coefficients of WL-WL interference in 3-D vertical channel NAND flash memory are considered. The effect of RTN on the program Vth distribution is comprehensively studied. The program Vth distribution of a WL is calibrated with the measurement, and a good agreement is obtained, validating the array program Vth distribution simulation method. The simulation method can help in improving the reliability of 3-D TLC NAND flash memory and provides guidance for the design and optimization of 3-D QLC NAND flash memory technology. |
| ArticleNumber | 42401 |
| Author | Lun, Zhiyuan Du, Gang Liu, Xiaoyan Wang, Kunliang Chen, Wangyong |
| Author_xml | – sequence: 1 givenname: Kunliang surname: Wang fullname: Wang, Kunliang organization: Institute of Microelectronics, Peking University – sequence: 2 givenname: Gang surname: Du fullname: Du, Gang email: gangdu@pku.edu.cn organization: Institute of Microelectronics, Peking University – sequence: 3 givenname: Zhiyuan surname: Lun fullname: Lun, Zhiyuan organization: Huawei Technologies Co., Ltd – sequence: 4 givenname: Wangyong surname: Chen fullname: Chen, Wangyong organization: Institute of Microelectronics, Peking University – sequence: 5 givenname: Xiaoyan surname: Liu fullname: Liu, Xiaoyan organization: Institute of Microelectronics, Peking University |
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| Cites_doi | 10.1007/s11432-013-4982-7 10.1002/bimj.4710390405 10.1109/TED.2015.2414711 10.1109/LED.2002.801305 10.1109/TED.2008.2003332 10.1007/s11432-015-5475-7 10.1007/s11431-014-5735-6 10.1109/TVLSI.2013.2267753 10.1109/TED.2016.2593913 10.1109/TED.2011.2147319 10.1007/s11432-015-5440-5 10.1109/LED.2017.2675160 10.1109/JPROC.2017.2713127 10.1109/TVLSI.2011.2160747 10.1109/TED.2008.2003230 10.1109/JSSC.2008.917559 10.1109/LED.2009.2026658 |
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| Copyright | Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019. |
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| Keywords | modeling and simulation program Vth distribution charge-trapping memory 3-D vertical channel TLC/QLC NAND flash memory measurement reliability |
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| Snippet | This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program... |
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| SubjectTerms | Computer Science Coupling coefficients Design optimization Flash memory (computers) Information Systems and Communication Service Interference Physical factors Research Paper Simulation Vertical distribution |
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| Title | Modeling of program Vth distribution for 3-D TLC NAND flash memory |
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