Investigation of the geometric and electronic structures of ErSi (2− x) with the density functional theory and comparison with STM images

Study of ErSi (2− x) surfaces system is submitted at one controversy in reason of the STM images bias voltage dependence. In this article, we have investigated by means of calculations issued of the density functional theory (DFT), atomic surface density for 2D and 3D epitaxial erbium silicide on Si...

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Published inSurface science Vol. 595; no. 1; pp. 40 - 48
Main Authors Duverger, E., Palmino, F., Ehret, E., Labrune, J.-C.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 05.12.2005
Amsterdam Elsevier Science
New York, NY Elsevier
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Abstract Study of ErSi (2− x) surfaces system is submitted at one controversy in reason of the STM images bias voltage dependence. In this article, we have investigated by means of calculations issued of the density functional theory (DFT), atomic surface density for 2D and 3D epitaxial erbium silicide on Si(1 1 1). DOS (density of state) in front of the surface, calculated with Wien2k, permits to simulate scanning tunneling microscopy (STM) images in function of the bias voltage and to discriminate the different surface arrangements. The calculations confirm the model of structure accepted and give some new elements in order to close the controversy on the question.
AbstractList Study of ErSi (2− x) surfaces system is submitted at one controversy in reason of the STM images bias voltage dependence. In this article, we have investigated by means of calculations issued of the density functional theory (DFT), atomic surface density for 2D and 3D epitaxial erbium silicide on Si(1 1 1). DOS (density of state) in front of the surface, calculated with Wien2k, permits to simulate scanning tunneling microscopy (STM) images in function of the bias voltage and to discriminate the different surface arrangements. The calculations confirm the model of structure accepted and give some new elements in order to close the controversy on the question.
Author Ehret, E.
Palmino, F.
Labrune, J.-C.
Duverger, E.
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crossref_primary_10_1063_5_0096174
crossref_primary_10_1103_PhysRevB_76_033303
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Issue 1
Keywords Wien2k simulation
Density functional theory
Silicon surface
STM
Erbium
Interface
Scanning tunneling microscopy
Electronic structure
Simulation
Rare earths
Density functional method
Silicon
Language English
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  publication-title: Surf. Sci.
  doi: 10.1016/S0039-6028(97)00206-9
  contributor:
    fullname: Wetzel
– volume: 90
  start-page: 4761
  year: 2001
  ident: 10.1016/j.susc.2005.07.036_bib16
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1409572
  contributor:
    fullname: Watanabe
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Snippet Study of ErSi (2− x) surfaces system is submitted at one controversy in reason of the STM images bias voltage dependence. In this article, we have investigated...
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SubjectTerms Condensed Matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Density functional theory
Erbium
Exact sciences and technology
Interface
Materials Science
Physics
Silicon surface
STM
Wien2k simulation
Title Investigation of the geometric and electronic structures of ErSi (2− x) with the density functional theory and comparison with STM images
URI https://dx.doi.org/10.1016/j.susc.2005.07.036
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