Concentration dependent electron distributions in heavily Si-doped GaAs
Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We found that the two peaks in the electron populations of the conduction band and the donor band, respectively, merge as the doping concentrati...
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| Published in | Solid state communications Vol. 99; no. 8; pp. 571 - 575 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
1996
Elsevier |
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| Abstract | Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We found that the two peaks in the electron populations of the conduction band and the donor band, respectively, merge as the doping concentration increases, and can not be distinguished at the electron concentration of the order of 10
18 cm
−3. |
|---|---|
| AbstractList | Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We found that the two peaks in the electron populations of the conduction band and the donor band, respectively, merge as the doping concentration increases, and can not be distinguished at the electron concentration of the order of 10 super(18) cm super(-3). Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We found that the two peaks in the electron populations of the conduction band and the donor band, respectively, merge as the doping concentration increases, and can not be distinguished at the electron concentration of the order of 10 18 cm −3. |
| Author | Lee, Hee-Chul Lim, H. Lee, Nam-Young Kim, Jae-Eun Park, Hae Yong Kwak, Dong-Hwa |
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| Cites_doi | 10.1063/1.359090 10.1103/PhysRevB.22.886 10.1143/JJAP.29.1900 10.1063/1.337069 10.1063/1.344532 10.1103/PhysRevB.43.4771 10.1080/00018737800101484 10.1063/1.322626 10.1063/1.342906 10.1007/BF00278341 10.1063/1.339777 10.1103/PhysRev.131.79 10.1063/1.103967 10.1103/PhysRev.93.632 10.1116/1.586135 10.1109/16.127463 10.1063/1.343958 10.1063/1.330581 10.1016/0169-4332(93)90091-O 10.1063/1.110877 |
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| Keywords | A. semiconductors E. luminescence D. electronic band structure Band structure Gallium arsenides Epitaxial layers Semiconductor materials Epitaxy Doping Luminescence Experimental study Silicon additions III-V compound Thin films Electronic structure Optical properties Molecular beam epitaxy III-V semiconductors |
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| References | Burstein (BIB8) 1954; 83 Olego, Cardona (BIB14) 1980; B22 Fatt (BIB6) 1993; 12 De-Sheng, Makita, Ploog, Queisser (BIB15) 1982; 53 Lee, Lee, Lee, Kim, Park, Kwak, Lee, Lim (BIB17) 1995; 77 Bennett, Lowney (BIB12) 1987; 62 Hoke, Lemonias, Weir, Brierley, Hendriks, Adlerstein, Zaitlin (BIB2) 1992; B10 Abram, Rees, Wilson (BIB10) 1978; 27 Moss (BIB9) 1954; B67 Yao, Compaan (BIB20) 1990; 57 Hellwege (BIB23) 1982; Vol. 17 Jourdan, Alexandre, Dubon-Chevallier, Dangla, Gao (BIB3) 1992; 39 Casey, Stern (BIB13) 1976; 47 Borghs, Bhattacharyya, Deneffe, Van Mieghem, Mertens (BIB16) 1989; 66 Szmyd, Majerfeld (BIB21) 1989; 54 Sydor, Jahren, Mitchel, Lampert, Haas, Yen, Mudare, Tomich (BIB4) 1990; 67 Bergman, Zhao, Holtz, Monemar, Sundaram, Merz, Gossard (BIB5) 1991; B43 Lu, Hanna, Majerfeld (BIB22) 1994; 64 Castaldini, Cavallini, Gombia, Mosca, Tarricone, Motta, Bora (BIB19) 1993; 63 Saito, Konagai, Takahashi (BIB1) 1990; 29 Kane (BIB7) 1963; 131 Lowney (BIB11) 1986; 60 Abramov, Abramova, Verbin, Gerlovin, Grigor'ev, Ignat'ev, Karimov, Novikov, Novikov (BIB18) 1993; 27 De-Sheng (10.1016/0038-1098(96)00221-9_BIB15) 1982; 53 Lee (10.1016/0038-1098(96)00221-9_BIB17) 1995; 77 Burstein (10.1016/0038-1098(96)00221-9_BIB8) 1954; 83 Olego (10.1016/0038-1098(96)00221-9_BIB14) 1980; B22 Borghs (10.1016/0038-1098(96)00221-9_BIB16) 1989; 66 Jourdan (10.1016/0038-1098(96)00221-9_BIB3) 1992; 39 Sydor (10.1016/0038-1098(96)00221-9_BIB4) 1990; 67 Abram (10.1016/0038-1098(96)00221-9_BIB10) 1978; 27 Bennett (10.1016/0038-1098(96)00221-9_BIB12) 1987; 62 Lu (10.1016/0038-1098(96)00221-9_BIB22) 1994; 64 Lowney (10.1016/0038-1098(96)00221-9_BIB11) 1986; 60 Casey (10.1016/0038-1098(96)00221-9_BIB13) 1976; 47 Moss (10.1016/0038-1098(96)00221-9_BIB9) 1954; B67 Szmyd (10.1016/0038-1098(96)00221-9_BIB21) 1989; 54 Bergman (10.1016/0038-1098(96)00221-9_BIB5) 1991; B43 Yao (10.1016/0038-1098(96)00221-9_BIB20) 1990; 57 Hoke (10.1016/0038-1098(96)00221-9_BIB2) 1992; B10 Fatt (10.1016/0038-1098(96)00221-9_BIB6) 1993; 12 Kane (10.1016/0038-1098(96)00221-9_BIB7) 1963; 131 Castaldini (10.1016/0038-1098(96)00221-9_BIB19) 1993; 63 Abramov (10.1016/0038-1098(96)00221-9_BIB18) 1993; 27 Saito (10.1016/0038-1098(96)00221-9_BIB1) 1990; 29 Hellwege (10.1016/0038-1098(96)00221-9_BIB23) 1982; Vol. 17 |
| References_xml | – volume: 47 start-page: 631 year: 1976 ident: BIB13 publication-title: J. Appl. Phys. contributor: fullname: Stern – volume: 29 start-page: 1900 year: 1990 ident: BIB1 publication-title: Jpn. J. Appl. Phys. contributor: fullname: Takahashi – volume: B22 start-page: 886 year: 1980 ident: BIB14 publication-title: Phys. Rev. contributor: fullname: Cardona – volume: 39 start-page: 767 year: 1992 ident: BIB3 publication-title: IEEE Trans. Electron Devices contributor: fullname: Gao – volume: 77 start-page: 6727 year: 1995 ident: BIB17 publication-title: J. Appl. Phys. contributor: fullname: Lim – volume: 27 start-page: 799 year: 1978 ident: BIB10 publication-title: Adv. Phys. contributor: fullname: Wilson – volume: 54 start-page: 1788 year: 1989 ident: BIB21 publication-title: J. Appl. Phys. contributor: fullname: Majerfeld – volume: 131 start-page: 79 year: 1963 ident: BIB7 publication-title: Phys. Rev. contributor: fullname: Kane – volume: 63 start-page: 208 year: 1993 ident: BIB19 publication-title: Appl. Surf. Sci. contributor: fullname: Bora – volume: 66 start-page: 4381 year: 1989 ident: BIB16 publication-title: J. Appl. Phys. contributor: fullname: Mertens – volume: B43 start-page: 4771 year: 1991 ident: BIB5 publication-title: Phys. Rev. contributor: fullname: Gossard – volume: 12 start-page: 609 year: 1993 ident: BIB6 publication-title: J. Mater. Sci. Lett. contributor: fullname: Fatt – volume: Vol. 17 start-page: 224 year: 1982 end-page: 225 ident: BIB23 article-title: Semiconductors: Physics of Group IV Elements and III–V Compounds publication-title: Landolt-Börnstein New Series contributor: fullname: Hellwege – volume: B10 start-page: 856 year: 1992 ident: BIB2 publication-title: J. Vac. Sci. Technol. contributor: fullname: Zaitlin – volume: 83 start-page: 632 year: 1954 ident: BIB8 publication-title: Phys. Rev. contributor: fullname: Burstein – volume: 67 start-page: 7423 year: 1990 ident: BIB4 publication-title: J. Appl. Phys. contributor: fullname: Tomich – volume: 27 start-page: 647 year: 1993 ident: BIB18 publication-title: Semiconductors contributor: fullname: Novikov – volume: 60 start-page: 2854 year: 1986 ident: BIB11 publication-title: J. Appl. Phys. contributor: fullname: Lowney – volume: 57 start-page: 147 year: 1990 ident: BIB20 publication-title: Appl. Phys. Lett. contributor: fullname: Compaan – volume: 62 start-page: 521 year: 1987 ident: BIB12 publication-title: J. Appl. Phys. contributor: fullname: Lowney – volume: B67 start-page: 775 year: 1954 ident: BIB9 publication-title: Proc. Phys. Soc. London contributor: fullname: Moss – volume: 53 start-page: 999 year: 1982 ident: BIB15 publication-title: J. Appl. Phys. contributor: fullname: Queisser – volume: 64 start-page: 88 year: 1994 ident: BIB22 publication-title: Appl. Phys. Lett. contributor: fullname: Majerfeld – volume: B67 start-page: 775 year: 1954 ident: 10.1016/0038-1098(96)00221-9_BIB9 contributor: fullname: Moss – volume: 77 start-page: 6727 year: 1995 ident: 10.1016/0038-1098(96)00221-9_BIB17 publication-title: J. Appl. Phys. doi: 10.1063/1.359090 contributor: fullname: Lee – volume: B22 start-page: 886 year: 1980 ident: 10.1016/0038-1098(96)00221-9_BIB14 publication-title: Phys. Rev. doi: 10.1103/PhysRevB.22.886 contributor: fullname: Olego – volume: 29 start-page: 1900 year: 1990 ident: 10.1016/0038-1098(96)00221-9_BIB1 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.29.1900 contributor: fullname: Saito – volume: 60 start-page: 2854 year: 1986 ident: 10.1016/0038-1098(96)00221-9_BIB11 publication-title: J. Appl. Phys. doi: 10.1063/1.337069 contributor: fullname: Lowney – volume: 67 start-page: 7423 year: 1990 ident: 10.1016/0038-1098(96)00221-9_BIB4 publication-title: J. Appl. Phys. doi: 10.1063/1.344532 contributor: fullname: Sydor – volume: B43 start-page: 4771 year: 1991 ident: 10.1016/0038-1098(96)00221-9_BIB5 publication-title: Phys. Rev. doi: 10.1103/PhysRevB.43.4771 contributor: fullname: Bergman – volume: 27 start-page: 799 year: 1978 ident: 10.1016/0038-1098(96)00221-9_BIB10 publication-title: Adv. Phys. doi: 10.1080/00018737800101484 contributor: fullname: Abram – volume: 47 start-page: 631 year: 1976 ident: 10.1016/0038-1098(96)00221-9_BIB13 publication-title: J. Appl. Phys. doi: 10.1063/1.322626 contributor: fullname: Casey – volume: 54 start-page: 1788 year: 1989 ident: 10.1016/0038-1098(96)00221-9_BIB21 publication-title: J. Appl. Phys. doi: 10.1063/1.342906 contributor: fullname: Szmyd – volume: Vol. 17 start-page: 224 year: 1982 ident: 10.1016/0038-1098(96)00221-9_BIB23 article-title: Semiconductors: Physics of Group IV Elements and III–V Compounds contributor: fullname: Hellwege – volume: 12 start-page: 609 year: 1993 ident: 10.1016/0038-1098(96)00221-9_BIB6 publication-title: J. Mater. Sci. Lett. doi: 10.1007/BF00278341 contributor: fullname: Fatt – volume: 62 start-page: 521 year: 1987 ident: 10.1016/0038-1098(96)00221-9_BIB12 publication-title: J. Appl. Phys. doi: 10.1063/1.339777 contributor: fullname: Bennett – volume: 131 start-page: 79 year: 1963 ident: 10.1016/0038-1098(96)00221-9_BIB7 publication-title: Phys. Rev. doi: 10.1103/PhysRev.131.79 contributor: fullname: Kane – volume: 57 start-page: 147 year: 1990 ident: 10.1016/0038-1098(96)00221-9_BIB20 publication-title: Appl. Phys. Lett. doi: 10.1063/1.103967 contributor: fullname: Yao – volume: 83 start-page: 632 year: 1954 ident: 10.1016/0038-1098(96)00221-9_BIB8 publication-title: Phys. Rev. doi: 10.1103/PhysRev.93.632 contributor: fullname: Burstein – volume: 27 start-page: 647 year: 1993 ident: 10.1016/0038-1098(96)00221-9_BIB18 publication-title: Semiconductors contributor: fullname: Abramov – volume: B10 start-page: 856 year: 1992 ident: 10.1016/0038-1098(96)00221-9_BIB2 publication-title: J. Vac. Sci. Technol. doi: 10.1116/1.586135 contributor: fullname: Hoke – volume: 39 start-page: 767 year: 1992 ident: 10.1016/0038-1098(96)00221-9_BIB3 publication-title: IEEE Trans. Electron Devices doi: 10.1109/16.127463 contributor: fullname: Jourdan – volume: 66 start-page: 4381 year: 1989 ident: 10.1016/0038-1098(96)00221-9_BIB16 publication-title: J. Appl. Phys. doi: 10.1063/1.343958 contributor: fullname: Borghs – volume: 53 start-page: 999 year: 1982 ident: 10.1016/0038-1098(96)00221-9_BIB15 publication-title: J. Appl. Phys. doi: 10.1063/1.330581 contributor: fullname: De-Sheng – volume: 63 start-page: 208 year: 1993 ident: 10.1016/0038-1098(96)00221-9_BIB19 publication-title: Appl. Surf. Sci. doi: 10.1016/0169-4332(93)90091-O contributor: fullname: Castaldini – volume: 64 start-page: 88 year: 1994 ident: 10.1016/0038-1098(96)00221-9_BIB22 publication-title: Appl. Phys. Lett. doi: 10.1063/1.110877 contributor: fullname: Lu |
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| Snippet | Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We... |
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| SubjectTerms | A. semiconductors Condensed matter: electronic structure, electrical, magnetic, and optical properties D. electronic band structure E. luminescence Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| Title | Concentration dependent electron distributions in heavily Si-doped GaAs |
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