Concentration dependent electron distributions in heavily Si-doped GaAs

Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We found that the two peaks in the electron populations of the conduction band and the donor band, respectively, merge as the doping concentrati...

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Bibliographic Details
Published inSolid state communications Vol. 99; no. 8; pp. 571 - 575
Main Authors Lee, Nam-Young, Kim, Jae-Eun, Park, Hae Yong, Kwak, Dong-Hwa, Lee, Hee-Chul, Lim, H.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1996
Elsevier
Subjects
A. semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. electronic band structure
E. luminescence
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
A. semiconductors
E. luminescence
D. electronic band structure
Band structure
Gallium arsenides
Epitaxial layers
Semiconductor materials
Epitaxy
Doping
Luminescence
Experimental study
Silicon additions
III-V compound
Thin films
Electronic structure
Optical properties
Molecular beam epitaxy
III-V semiconductors
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Summary:Photoluminescence spectra of heavily Si-doped GaAs grown by molecular beam epitaxy (MBE) were investigated at 20 K as a function of electron concentration. We found that the two peaks in the electron populations of the conduction band and the donor band, respectively, merge as the doping concentration increases, and can not be distinguished at the electron concentration of the order of 10 18 cm −3.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(96)00221-9