Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

One of the most promising methods of obtaining nonpolar GaN substrates is regrowth of thick GaN crystals using hydride vapor phase epitaxy (HVPE). The multistep growth was performed along the $c$ polar direction. After HVPE depositions, the crystal was sliced along ($11\bar{2}0$) nonpolar planes. On...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 5; no. 1; pp. 011001 - 011001-3
Main Authors Teisseyre, Henryk, Domagala, Jaroslaw Zbigniew, Lucznik, Boleslaw, Reszka, Anna, Kowalski, Bogdan Jerzy, Bockowski, Michal, Kamler, Grzegorz, Grzegory, Izabella
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.01.2012
Online AccessGet full text

Cover

More Information
Summary:One of the most promising methods of obtaining nonpolar GaN substrates is regrowth of thick GaN crystals using hydride vapor phase epitaxy (HVPE). The multistep growth was performed along the $c$ polar direction. After HVPE depositions, the crystal was sliced along ($11\bar{2}0$) nonpolar planes. On such samples, we performed structural high-resolution X-ray characterization. The full width at half maximum of the X-ray rocking curves for the $11\bar{2}0$ reflection achieved 27 arcsec. The interfaces between each regrowth step were clearly visible in cathodoluminescence (CL), due to different concentrations of residual dopants before and after a regrowth step.
Bibliography:Nonpolar substrate ($11\bar{2}0$) slice of thick GaN crystal grown in four HVPE runs. The inverted pyramid pit visible on the photograph starts from the bottom and recovers in every subsequent growth run. The distance between grid lines is 1 mm. X-ray reciprocal space map for $11\bar{2}0$ reflection taken for the sample region where FWHM of $11\bar{2}0$ rocking curve (collected with 0.05 mm slit) achieved about 27 arcsec. Rocking curve images along selected line marked as A, B, and C on the sample photograph. (a) SEM image of nonpolar sample with the interface between two regrowth regions. (b) Panchromatic CL image taken at the same area. (c) CL image taken at 360 nm spectral region related to excitons. (d) CL image taken at 520 (yellow luminescence) at the same area. (In the photographs the right and left sides show the material before and after the regrowth step, respectively. $C$-axis growth direction is marked by arrow.)
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.011001