Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO

•Ultraviolet photodetector based on thinfilm based p-NiO/SiO2/n-ZnO heterostructure is successfully fabricated for the first time.•A design of low-power-consumption photodetector is realized by using low-cost method.•Rectification ratio and rise time of the photodetector are 57 and 0.048 s, respecti...

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Bibliographic Details
Published inOptics and laser technology Vol. 157; p. 108634
Main Authors Jia, Menghan, Wang, Fang, Tang, Libin, Xiang, Jinzhong, Teng, Kar Seng, Lau, Shu Ping, Lü, Yanfei
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.2023
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