Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
•Ultraviolet photodetector based on thinfilm based p-NiO/SiO2/n-ZnO heterostructure is successfully fabricated for the first time.•A design of low-power-consumption photodetector is realized by using low-cost method.•Rectification ratio and rise time of the photodetector are 57 and 0.048 s, respecti...
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Published in | Optics and laser technology Vol. 157; p. 108634 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.2023
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Subjects | |
Online Access | Get full text |
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